Light-Emitting Element, Display Module, Lighting Module, Light-Emitting Device, Display Device, Electronic Appliance, and Lighting Device

ABSTRACT

A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.14/467,532, filed Aug. 25, 2014, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2013-174560 on Aug. 26, 2013, Serial No. 2013-249449 on Dec. 2, 2013,and Serial No. 2014-112119 on May 30, 2014, all of which areincorporated by reference.

TECHNICAL FIELD

The present invention relates to an object, a method, or a manufacturingmethod. In addition, the present invention relates to a process, amachine, manufacture, or a composition of matter. In particular, oneembodiment of the present invention relates to a semiconductor device, adisplay device, a light-emitting device, a power storage device, adriving method thereof, or a fabrication method thereof. In particular,one embodiment of the present invention relates to a light-emittingelement containing an organic compound as a light-emitting substance, adisplay module, a lighting module, a display device, a light-emittingdevice, an electronic appliance, and a lighting device.

BACKGROUND ART

In recent years, research and development of a light-emitting element(organic EL element) that uses an organic compound and utilizeselectroluminescence (EL) have been actively promoted. In a basicstructure of such a light-emitting element, an organic compound layercontaining a light-emitting substance (an EL layer) is interposedbetween a pair of electrodes. By applying voltage to the element, lightcan be emitted from the light-emitting substance.

The light-emitting element is a self-luminous element and thus hasadvantages such as high visibility and no need for backlight, and isconsidered to be suitable as a flat panel display element. In addition,it is also a great advantage that a display including the light-emittingelement can be fabricated as a thin and lightweight display and has veryfast response speed.

The light-emitting element can provide planar light emission; thus, alarge-area element can be formed easily. This feature is difficult toobtain with point light sources typified by incandescent lamps and LEDsor linear light sources typified by fluorescent lamps. Thus, thelight-emitting element also has great potential as a planar light sourceapplicable to a lighting device and the like.

In the case of such an organic EL element, electrons from a cathode andholes from an anode are injected into an EL layer, so that currentflows. By recombination of the injected electrons and holes, the organiccompound having a light-emitting property is excited and provides lightemission.

The excited state of an organic compound can be a singlet excited state(S*) or a triplet excited state (T*), and light emission from thesinglet excited state is referred to as fluorescence, and light emissionfrom the triplet excited state is referred to as phosphorescence. Thestatistical generation ratio of the excited states in the light-emittingelement is considered to be S*:T*=1:3.

In a compound that emits light from the singlet excited state(hereinafter, referred to as fluorescent substance), at roomtemperature, generally light emission from the triplet excited state(phosphorescence) is not observed while only light emission from thesinglet excited state (fluorescence) is observed. Therefore, theinternal quantum efficiency (the ratio of generated photons to injectedcarriers) of a light-emitting element using a fluorescent substance isassumed to have a theoretical limit of 25% based on the ratio of S* toT* that is 1:3.

In contrast, in a compound that emits light from the triplet excitedstate (hereinafter, referred to as a phosphorescent compound), lightemission from the triplet excited state (phosphorescence) is observed.Since intersystem crossing easily occurs in a phosphorescent compound,the internal quantum efficiency can be increased to 100% in theory. Thatis, a light-emitting element using a phosphorescent substance can easilyhave higher emission efficiency than a light-emitting element using afluorescent substance. For this reason, light-emitting elements usingphosphorescent substances are now under active development in order toobtain highly efficient light-emitting elements.

A white light-emitting element disclosed in Patent Document 1 includes alight-emitting region containing a plurality of kinds of light-emittingdopants that emit phosphorescence. An element disclosed in PatentDocument 2 includes an intermediate layer (a charge-generation layer)between a fluorescent layer and a phosphorescent layer (i.e., theelement is what is called a tandem element).

REFERENCE Patent Document 1: Japanese Translation of PCT InternationalApplication No. 2004-522276 Patent Document 2: Japanese Published PatentApplication No. 2006-024791 DISCLOSURE OF INVENTION

As multicolor light-emitting elements typified by white light-emittingelements, elements including an intermediate layer (a charge-generationlayer) between a fluorescent layer and a phosphorescent layer have beendeveloped (Patent Document 2), and some of them have been put intopractical application. In the light-emitting element having such astructure, light with a short wavelength is emitted from the fluorescentlayer and light with a long wavelength is emitted from thephosphorescent layer.

In the structure, fluorescence is used as light with a short wavelengththat has a problem in the lifetime and phosphorescence is used as lightwith a long wavelength. The structure is employed in order to achievestable characteristics of a multicolor light-emitting element in spiteof efficiency lower than that of an element in which phosphorescence isused as light with a long wavelength and light with a short wavelength.

The multicolor light-emitting element that has the above-describedstructure in which the reliability is put ahead of the performance issuitable for practical application as compared with generallight-emitting elements, which still often have a problem in thelifetime; however, a larger number of films are formed in order toobtain one multicolor light-emitting element, which hinders thepractical application.

There are some reasons for providing the intermediate layer between thephosphorescent layer and the fluorescent layer in the multicolor elementhaving the structure. One of the reasons is for suppressing quenching ofphosphorescence caused by the fluorescent layer.

In the fluorescent layer, a substance having a condensed aromatic ring(especially, a condensed aromatic hydrocarbon ring) skeleton, typifiedby anthracene, is generally used as a host material. The substanceshaving the fused aromatic ring skeleton often have a relatively lowtriplet level. Thus, in the case where the fluorescent layer is formedin contact with a phosphorescent layer, the triplet excitation energygenerated in the phosphorescent layer is transferred to the tripletlevel of the host material in the fluorescent layer to be quenched.Since a triplet exciton has a long lifetime, the diffusion length of theexciton is long and excitation energy generated in the phosphorescentlayer as well as excitation energy generated at the interface betweenthe fluorescent layer and the phosphorescent layer are quenched by thehost material in the fluorescent layer. Thus, a significant reduction inemission efficiency is caused.

The above-described problems are solved by using a host material withhigh triple excitation energy for the fluorescent layer. In that case,however, the singlet excitation energy of the host material is higherthan the triplet excitation energy, so that energy is not sufficientlytransferred from the host material to a fluorescent dopant. This resultsin insufficient emission efficiency in the fluorescent layer. Inaddition, non-radiative decay of the host material is accelerated todegrade the characteristics (especially, lifetime) of the element. Whenthe singlet excitation energy of the host material is higher thannecessary, the HOMO-LUMO gap of the host material is large. This leadsto an excessive increase in drive voltage.

In view of the above, an object of one embodiment of the presentinvention is to provide a light-emitting element that utilizesfluorescence and phosphorescence and is advantageous for practicalapplication. Another object of one embodiment of the present inventionis to provide a light-emitting element that utilizes fluorescence andphosphorescence, has a small number of fabrication steps owing to arelatively small number of layers to be formed, and is advantageous forpractical application.

Another object of one embodiment of the present invention is to providea light-emitting element that utilizes fluorescence and phosphorescenceand has high emission efficiency.

Another object of one embodiment of the present invention is to providea light-emitting element that utilizes fluorescence and phosphorescence,has a relatively small number of layers to be formed, is advantageousfor practical application, and has high emission efficiency. Anotherobject of one embodiment of the present invention is to provide a novellight-emitting element.

Another object of one embodiment of the present invention is to providea display module, a lighting module, a light-emitting device, a displaydevice, an electronic appliance, and a lighting device that can befabricated at low cost by using the light-emitting element.

Another object of one embodiment of the present invention is to providea display module, a lighting module, a light-emitting device, a displaydevice, an electronic appliance, and a lighting device that have reducedpower consumption by using the light-emitting element.

It is only necessary that at least one of the above-described objects beachieved in the present invention.

The above-described objects can be achieved by a light-emitting elementthat has a stacked-layer structure of a first light-emitting layer 113 acontaining a host material and a fluorescent substance and a secondlight-emitting layer 113 b containing two kinds of organic compoundsthat form an exciplex and a substance that can convert tripletexcitation energy into luminescence. Note that a light-emitting elementin which light emitted from the first light-emitting layer 113 a has anemission spectrum peak on the shorter wavelength side than an emissionspectrum peak of light emitted from the second light-emitting layer 113b more effectively achieves the above-described objects.

One embodiment of the present invention is a light-emitting element thatincludes a pair of electrodes and an EL layer interposed between thepair of electrodes. The EL layer includes the first light-emitting layerand the second light-emitting layer. The emission spectrum of lightemitted from the first light-emitting layer 113 a is located on theshorter wavelength side than the emission spectrum of light emitted fromthe second light-emitting layer. The first light-emitting layer containsat least a fluorescent substance and a host material. The secondlight-emitting layer contains at least a substance that can converttriplet excitation energy into luminescence, a first organic compound,and a second organic compound. The first organic compound and the secondorganic compound form an exciplex.

Another embodiment of the present invention is a light-emitting elementthat includes a pair of electrodes and an EL layer interposed betweenthe pair of electrodes. The EL layer includes the first light-emittinglayer and the second light-emitting layer that are stacked in contactwith each other. The emission spectrum of light emitted from the firstlight-emitting layer is located on the shorter wavelength side than theemission spectrum of light emitted from the second light-emitting layer.The first light-emitting layer contains at least a fluorescent substanceand a host material. The second light-emitting layer contains at least asubstance that can convert triplet excitation energy into luminescence,a first organic compound, and a second organic compound. The firstorganic compound and the second organic compound form an exciplex.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which energy is transferred fromthe exciplex to the substance that can convert triplet excitation energyinto luminescence.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the singlet excitationlevel of the host material is higher than the singlet excitation levelof the fluorescent substance, and the triplet excitation level of thehost material is lower than the triplet excitation level of thefluorescent substance.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the triplet excitationlevel of the host material is lower than the triplet excitation levelsof the first organic compound and the second organic compound.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the host material has acondensed aromatic ring skeleton.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the host material has ananthracene skeleton.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the host material is anorganic compound having an anthracene skeleton and the fluorescentsubstance is an organic compound having a pyrene skeleton.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the second light-emittinglayer contains n (n is an integer of 2 or more) kinds of substanceshaving different emission spectra as the substance that can converttriplet excitation energy into luminescence.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the second light-emittinglayer includes n layers and the n layers contain different substancesthat can convert triplet excitation energy into luminescence.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the second light-emittinglayer contains a first phosphorescent substance and a secondphosphorescent substance that have different emission spectra as thesubstance that can convert triplet excitation energy into luminescence.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the first phosphorescentsubstance emits light in the red region, the second phosphorescentsubstance emits light in the green region, and the fluorescent substanceemits light in the blue region.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the first phosphorescentsubstance has an emission spectrum peak in the range of 580 nm to 680nm, the second phosphorescent substance has an emission spectrum peak inthe range of 500 nm to 560 nm, and the fluorescent substance has anemission spectrum peak in the range of 400 nm to 480 nm.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the second light-emittinglayer includes a first phosphorescent layer and a second phosphorescentlayer, a first phosphorescent substance is contained in the firstphosphorescent layer, and a second phosphorescent substance is containedin the second phosphorescent layer.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the first light-emittinglayer, the first phosphorescent layer, and the second phosphorescentlayer are stacked in this order.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the first light-emittinglayer is formed on an anode side of the pair of electrodes and thesecond phosphorescent layer is formed on a cathode side of the pair ofelectrodes.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the first phosphorescentsubstance exhibits a carrier-trapping property in the firstphosphorescent layer.

Another embodiment of the present invention is a light-emitting elementhaving the above-described structure in which the carrier-trappingproperty is an electron-trapping property.

Another embodiment of the present invention is a display module thatincludes any of the above-described light-emitting elements.

Another embodiment of the present invention is a lighting module thatincludes any of the above-described light-emitting elements.

Another embodiment of the present invention is a light-emitting devicethat includes any of the above-described light-emitting elements and aunit for controlling the light-emitting element.

Another embodiment of the present invention is a display device thatincludes any of the above-described light-emitting elements in a displayportion and a unit for controlling the light-emitting element.

Another embodiment of the present invention is a lighting device thatincludes any of the above-described light-emitting elements in alighting portion and a unit for controlling the light-emitting element.

Another embodiment of the present invention is an electronic appliancethat includes any of the above-described light-emitting elements.

Note that the light-emitting device in this specification includes, inits category, an image display device that uses a light-emittingelement. The category of the light-emitting device in this specificationincludes a module in which a light-emitting element is provided with aconnector such as an anisotropic conductive film or a tape carrierpackage (TCP); a module having a TCP at the tip of which a printedwiring board is provided; and a module in which an integrated circuit(IC) is directly mounted on a light-emitting element by a chip on glass(COG) method. Furthermore, the category includes a light-emitting devicethat is used in lighting equipment or the like.

In one embodiment of the present invention, a multicolor light-emittingelement that utilizes fluorescence and phosphorescence, has a relativelysmall number of layers to be formed, and is advantageous for practicalapplication can be provided.

In another embodiment of the present invention, a multicolorlight-emitting element that utilizes fluorescence and phosphorescenceand has high emission efficiency can be provided.

In another embodiment of the present invention, a multicolorlight-emitting element that utilizes fluorescence and phosphorescence,has a relatively small number of layers to be formed, is advantageousfor practical application, and has high emission efficiency can beprovided.

In another embodiment of the present invention, a display module, alighting module, a light-emitting device, a display device, anelectronic appliance, and a lighting device that can be fabricated atlow cost by using any of the above-described light-emitting elements canbe provided.

In another embodiment of the present invention, a display module, alighting module, a light-emitting device, a display device, anelectronic appliance, and a lighting device that have reduced powerconsumption by using any of the above-described light-emitting elementscan be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are conceptual diagrams of light-emitting elements.

FIGS. 2A and 2B are conceptual diagrams of an active matrixlight-emitting device.

FIGS. 3A and 3B are conceptual diagrams of active matrix light-emittingdevices.

FIG. 4 is a conceptual diagram of an active matrix light-emittingdevice.

FIGS. 5A and 5B are conceptual diagrams of a passive matrixlight-emitting device.

FIGS. 6A and 6B illustrate a lighting device.

FIGS. 7A, 7B1, 7B2, 7C and 7D illustrate electronic appliances.

FIG. 8 illustrates a light source device.

FIG. 9 illustrates a lighting device.

FIG. 10 illustrates a lighting device.

FIG. 11 illustrates in-vehicle display devices and lighting devices.

FIGS. 12A to 12C illustrate an electronic appliance.

FIG. 13 shows current density-luminance characteristics of alight-emitting element 1.

FIG. 14 shows luminance-current efficiency characteristics of thelight-emitting element 1.

FIG. 15 shows voltage-luminance characteristics of the light-emittingelement 1.

FIG. 16 shows luminance-external quantum efficiency characteristics ofthe light-emitting element 1.

FIG. 17 shows an emission spectrum of the light-emitting element 1.

FIG. 18 shows time dependence of normalized luminance of thelight-emitting element 1.

FIGS. 19A and 19B show emission spectra of a light-emitting element 2and a light-emitting element 3.

FIG. 20 shows an emission spectrum of a light-emitting element 4.

FIG. 21 shows a correlation between energy levels of substances andexciplexes in a light-emitting element of one embodiment of the presentinvention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the drawings. Note that the present invention is notlimited to the description below, and it is easily understood by thoseskilled in the art that various changes and modifications can be madewithout departing from the spirit and scope of the present invention.Therefore, the invention should not be construed as being limited to thedescription in the following embodiments.

Embodiment 1

FIG. 1A is a diagram illustrating a light-emitting element of oneembodiment of the present invention. The light-emitting element includesat least a pair of electrodes (a first electrode 101 and a secondelectrode 102) and an EL layer 103 including a light-emitting layer 113.The light-emitting layer 113 includes the first light-emitting layer 113a and the second light-emitting layer 113 b.

FIG. 1A also illustrates a hole-injection layer 111, a hole-transportlayer 112, an electron-transport layer 114, and an electron-injectionlayer 115 in the EL layer 103. However, this stacked-layer structure isan example, and the structure of the EL layer 103 in the light-emittingelement of one embodiment of the present invention is not limitedthereto. Note that in FIG. 1A, the first electrode 101 functions as ananode, and the second electrode 102 functions as a cathode.

The first light-emitting layer 113 a contains a fluorescent substanceand a host material. The second light-emitting layer 113 b contains afirst organic compound, a second organic compound, and a phosphorescentcompound. In the light-emitting layer having the structure, acombination of the first organic compound and the second organiccompound forms an exciplex.

This structure enables light originating from the fluorescent substanceto be emitted efficiently from the first light-emitting layer 113 a andlight originating from the phosphorescent substance to be emittedefficiently from the second light-emitting layer 113 b. Note that evenwhen the light-emitting element does not include a charge-generationlayer between the first light-emitting layer 113 a and the secondlight-emitting layer 113 b (i.e., even when the light-emitting elementis not a tandem element), both fluorescence and phosphorescence can beobtained efficiently.

When a fluorescent layer and a phosphorescent layer are included in thesame EL layer to emit light, the triplet excitation energy of thephosphorescent layer is generally transferred to a host materialoccupying a large part of the fluorescent layer. This causes asignificant reduction in emission efficiency. The reason is as follows:since a substance having a condensed aromatic ring (especially, acondensed aromatic hydrocarbon ring) skeleton, which is typified byanthracene that has a low triplet level, is generally used as a hostmaterial, triplet excitation energy generated in the phosphorescentlayer is transferred to the host material in the fluorescent layer,which results in non-radiative decay. At present, it is difficult toobtain a desired emission wavelength and favorable elementcharacteristics or reliability without using a substance having acondensed aromatic ring skeleton in the fluorescent layer; thus, thestructure in which the fluorescent layer and the phosphorescent layerare included in the same EL layer makes it difficult to obtain alight-emitting element having favorable characteristics.

Since a triplet excited state has a long relaxation time, the diffusionlength of an exciton is long, many of the excitons generated in thephosphorescent layer are transferred to the fluorescent layer because ofdiffusion, and non-radiative decay of the excitons is caused. Thisfurther reduces the emission efficiency of the phosphorescent layer.

In this embodiment, the first organic compound and the second organiccompound form an exciplex in the second light-emitting layer 113 b, andthe triplet excitation energy is transferred from the exciplex to thephosphorescent substance, so that light emission can be obtained. Thisstructure can solve the above-described problems.

An exciplex is an excited state formed from two kinds of substances. Thetwo kinds of substances that have formed the exciplex return to a groundstate by emitting light and serve as the original two kinds ofsubstances. In other words, an exciplex itself does not have a groundstate, and energy transfer between exciplexes or energy transfer to anexciplex from another substance is unlikely to occur accordingly inprinciple.

A process in which one of the first organic compound and the secondorganic compound as a cation and the other of the first organic compoundand the second organic compound as an anion are adjacent to each otherto form an exciplex (an electroplex process) is considered dominant forthe generation of the exciplex in the light-emitting element. Even whenone of the first organic compound and the second organic compound comesinto an excited state, the one quickly interacts with the other of thefirst organic compound and the second organic compound to be adjacent toeach other, so that an exciplex is formed; thus, most excitons in thesecond light-emitting layer 113 b exist as exciplexes.

The singlet excitation energy of an exciplex corresponds to a differencein energy between the lower HOMO level of one of the first organiccompound and the second organic compound and the higher LUMO level ofthe other of the first organic compound and the second organic compound;thus, the singlet excitation energy of the exciplex is lower than thesinglet excitation energy of both of the organic compounds, and singletexcitation energy transfer from the exciplex to the first organiccompound and the second organic compound does not occur. Furthermore,the first organic compound and the second organic compound are selectedso that the triplet excitation energy of the exciplex is lower than thetriplet excitation energy of the first organic compound or the secondorganic compound, preferably lower than the triplet excitation energy ofthe first organic compound and the second organic compound, wherebyenergy transfer from an exciplex to the first organic compound and thesecond organic compound can hardly occur. In addition, energy transferbetween the exciplexes hardly occurs as described above; thus, diffusionof the excitons in the second light-emitting layer 113 b hardly occurs.As a result, the above-described problems can be solved.

When the first light-emitting layer 113 a that is a fluorescent layerand the second light-emitting layer 113 b are in contact with eachother, energy transfer (especially triplet energy transfer) from theexciplex to the host material of the first light-emitting layer 113 acan occur at the interface. However, diffusion of the excitons in thesecond light-emitting layer 113 b hardly occurs as described above;thus, energy transfer from the exciplex to the host material in thefirst light-emitting layer 113 a occurs in a limited area (i.e., theinterface between the first light-emitting layer 113 a and the secondlight-emitting layer 113 b), and large loss of the excitation energydoes not occur. Thus, one feature of one embodiment of the presentinvention is that high efficiency can be obtained even when the firstlight-emitting layer 113 a and the second light-emitting layer 113 b arein contact with each other although the light-emitting layers are notnecessarily in contact with each other. In other words, an elementstructure in which the first light-emitting layer 113 a and the secondlight-emitting layer 113 b are in contact with each other is also oneembodiment of the present invention.

Also in the case where the triplet excitation energy of the hostmaterial contained in the fluorescent layer is lower than the tripletexcitation energy of the first organic compound and the second organiccompound contained in the phosphorescent layer as described above,application of one embodiment of the present invention enables alight-emitting element to emit fluorescence and phosphorescence withhigh efficiency.

Furthermore, in the light-emitting element of one embodiment of thepresent invention, even when energy transfer (especially triplet energytransfer) from the exciplex to the host material in the firstlight-emitting layer 113 a or energy transfer from the phosphorescentsubstance to the host material in the first light-emitting layer 113 aoccurs at the interface between the first light-emitting layer 113 a andthe second light-emitting layer 113 b, the energy can be converted intoluminescence in the first light-emitting layer 113 a. In other words,when the first light-emitting layer 113 a has a structure in which asinglet excited state is generated easily by triplet-tripletannihilation (T-T annihilation: TTA), the triplet excitation energytransferred from the exciplex to the host material at the interface canbe converted into fluorescence in the first light-emitting layer 113 a.This enables energy loss of the light-emitting element of one embodimentof the present to be reduced. In order that the light-emitting layer 113a can have the structure in which the single excited state is generatedeasily by TTA, it is preferable to select a host material and afluorescent substance in the first light-emitting layer 113 a so thatthe singlet excitation level of the host material is higher than thesinglet excitation level of the fluorescent substance and the tripletexcitation level of the host material is lower than the tripletexcitation level of the fluorescent substance. As a combination of thehost material and the fluorescent substance that are in such a relation,a combination of a material having an anthracene skeleton as the hostmaterial and a material having a pyrene skeleton as the fluorescentsubstance, or the like is preferable.

Note that when the first light-emitting layer 113 a is too thick,emission from the second light-emitting layer 113 c is difficult toobtain. In addition, when the first light-emitting layer 113 a is toothin, emission from the first light-emitting layer 113 a is difficult toobtain. For those reasons, the thickness of the first light-emittinglayer 113 a is preferably greater than or equal to 5 nm and less than orequal to 20 nm.

In the case where the first light-emitting layer 113 a is formed on theanode side, the first light-emitting layer 113 a preferably has ahole-transport property. In that case, a bipolar material having a highhole-transport property is preferably used. A material having ananthracene skeleton is preferable as such a material. Furthermore, whenthe fluorescent substance has a high hole-trapping property (e.g., acondensed aromatic amine compound described later), the concentration ofthe fluorescent substance is preferably lower than or equal to 5%,further preferably higher than or equal to 1% and lower than or equal to4%, still further preferably higher than or equal to 1% and lower thanor equal to 3%, in which case phosphorescence and fluorescence can beobtained in a balanced manner and with high efficiency. Note that thefluorescent substance exhibits a hole-trapping property when the HOMOlevel of the fluorescent substance is higher than the HOMO level of thehost material.

Although there is no limitation on the combination of the first organiccompound and the second organic compound in the second light-emittinglayer 113 b as long as an exciplex can be formed, one organic compoundis preferably a material having a hole-transport property and the otherorganic compound is preferably a material having an electron-transportproperty. In that case, a donor-acceptor excited state is formed easily,which allows an exciplex to be formed efficiently. In the case where thecombination of the first organic compound and the second organiccompound is a combination of the material having a hole-transportproperty and the material having an electron-transport property, thecarrier balance can be controlled easily by adjusting the mixing ratio.Specifically, the weight ratio of the material having a hole-transportproperty to the material having an electron-transport property ispreferably 1:9 to 9:1 inclusive. In order to increase quantumefficiency, it is particularly preferable that the weight ratio of thematerial having a hole-transport property to the material having anelectron-transport property be 5:5 to 9:1 inclusive in a region closestto the anode in the second light-emitting layer 113 b. Since the carrierbalance can be easily controlled in the light-emitting element havingthe above-described structure, a recombination region can also be easilyadjusted. The light-emitting element of one embodiment of the presentinvention also has a feature in that an emission color can be adjustedby controlling the carrier balance as described above.

In the light-emitting element of this embodiment, a carrierrecombination region is preferably distributed to some extent. For that,it is preferable that each light-emitting layer have a moderate degreeof carrier-trapping property, and it is particularly preferable that thephosphorescent substance have an electron-trapping property. Examples ofa substance that has a high electron-trapping property includetransition metal complexes (e.g., an iridium complex and a platinumcomplex) whose ligands include a diazine skeleton such as a pyrimidineskeleton or a pyrazine skeleton. Note that the phosphorescent substanceexhibits an electron-trapping property when the LUMO level of thephosphorescent substance is lower than the LUMO levels of both of thefirst organic compound and the second organic compound.

Note that in the light-emitting element, light emitted from the firstlight-emitting layer 113 a preferably has a peak on the shorterwavelength side than light emitted from the second light-emitting layer113 b. The luminance of a light-emitting element using thephosphorescent substance emitting light with a short wavelength tends todegrade quickly. In view of the above, fluorescence with a shortwavelength is used, so that a light-emitting element with lessdegradation of luminance can be provided.

The number and thicknesses of layers forming the EL layer are smaller inthe light-emitting element of one embodiment of the present inventionthan in a tandem element; thus, the light-emitting element of oneembodiment of the present invention is cost-effective and suitable formass production. In addition, the number of layers forming the EL layeris small as described above; thus, the thickness of the EL layer can besmall and the light-emitting element is optically advantageous (i.e.,the outcoupling efficiency is high). Furthermore, the light-emittingelement can have low drive voltage and provide both fluorescence andphosphorescence efficiently at a drive voltage of 5 V or lower.

Moreover, although the fluorescent layer and the phosphorescent layerare in contact with each other, deactivation of the triplet excitationenergy is less likely to occur owing to the use of the above-describedexciplex; thus, both phosphorescence and fluorescence can be obtainedeasily.

FIG. 21 shows a correlation between energy levels of substances andexciplexes in the light-emitting element described in this embodiment.In FIG. 21, S_(FH) denotes the singlet excitation level of the hostmaterial in the first light-emitting layer 113 a; T_(FH), the tripletexcitation level of the host material in the first light-emitting layer113 a; S_(FG) and T_(FG), the singlet excitation level and the tripletexcitation level of a guest material (the fluorescent substance) in thefirst light-emitting layer 113 a, respectively; S_(PH) and T_(PH), thesinglet excitation level and the triplet excitation level of a hostmaterial (the first organic compound or the second organic compound) inthe second light-emitting layer 113 b, respectively; S_(E) and T_(E),the singlet excitation level and the triplet excitation level of theexciplex in the second light-emitting layer 113 b, respectively; andT_(PG), the triplet excitation level of a guest material (thephosphorescent substance) in the second light-emitting layer 113 b.

As shown in FIG. 21, TTA occurs because of collision of triplet excitedmolecules of the host materials in the first light-emitting layer 113 aand some of the triplet excited molecules of the host material areconverted into singlet excited molecules while some of the tripletexcited molecules are thermally decayed. Then, the singlet excitationenergy of the host materials that is generated by TTA is transferred tothe singlet excited state of the fluorescent substance, and the singletexcitation energy is converted into fluorescence.

In the second light-emitting layer 113 b, the excitation levels S_(E)and T_(E) of the exciplex are lower than the excitation levels S_(PH)and T_(PH) of the host materials (the first organic compound and thesecond organic compound); thus, excitation energy transfer from theexciplex to the host material does not occur. In addition, needless tosay, energy transfer from the exciplex to another exciplex does notoccur. When the excitation energy of the exciplex is transferred to theguest material (the phosphorescent substance), the excitation energy isconverted into luminescence. As described above, the triplet excitationenergy is hardly diffused and is converted into luminescence in thesecond light-emitting layer 113 b.

Since the triplet excitation energy is hardly diffused, light emissioncan be obtained with high efficiency from both of the firstlight-emitting layer 113 a and the second light-emitting layer 113 b inspite of a little energy transfer at the interface between the firstlight-emitting layer 113 a and the second light-emitting layer 113 b(e.g., energy transfer from T_(PG) of the phosphorescent substance atthe interface to T_(FH) or T_(FG)). Note that in the firstlight-emitting layer 113 a, the singlet excited state is generated bythe triplet excitation energy in TTA, and part of the energy transfer atthe interface is converted into fluorescence. This can suppress loss ofthe energy.

In the light-emitting element of this embodiment, the firstlight-emitting layer 113 a and the second light-emitting layer 113 b aremade to emit light with different emission wavelengths, so that thelight-emitting element can be a multicolor light-emitting element. Theemission spectrum of the light-emitting element is formed by combininglight having different emission peaks, and thus has at least two peaks.

Such a light-emitting element is suitable for obtaining white lightemission. When the first light-emitting layer 113 a and the secondlight-emitting layer 113 b emit light of complementary colors, whitelight emission can be obtained. In addition, white light emission with ahigh color rendering property that is formed of three colors or four ormore colors can be obtained by using a plurality of light-emittingsubstances emitting light with different wavelengths for one or both ofthe light-emitting layers. In that case, each of the light-emittinglayers may be divided into layers and the divided layers may containdifferent light-emitting substances.

The lowest-energy-side absorption band of the phosphorescent substanceoverlaps the emission spectrum of the exciplex in the secondlight-emitting layer 113 b, whereby the light-emitting element can havehigher emission efficiency. The difference in equivalent energy valuebetween a peak wavelength in the lowest-energy-side absorption band ofthe phosphorescent substance and a peak wavelength of the emissionspectrum of the exciplex is preferably less than or equal to 0.2 eV, inwhich case the overlap between the absorption band and the emissionspectrum is large. Although the lowest-energy-side absorption band ofthe phosphorescent substance is preferably an absorption band of thetriplet excitation level, the lowest-energy-side absorption band ispreferably an absorption band of the singlet excitation level in thecase where a TADF material is used instead of the phosphorescentsubstance as described later.

In FIG. 1A, the first light-emitting layer 113 a is formed on the sidewhere the first electrode 101 functioning as the anode is formed and thesecond light-emitting layer 113 b is formed on the side where the secondelectrode 102 functioning as the cathode is formed. However, thestacking order may be reversed. In other words, the first light-emittinglayer 113 a may be formed on the side where the second electrode 102functioning as the cathode is formed and the second light-emitting layer113 b may be formed on the side where the first electrode 101functioning as the anode is formed.

Note that the structure of the light-emitting element in this embodimentis effective as long as the light-emitting substance contained in thesecond light-emitting layer 113 b can convert triplet excitation energyinto luminescence. In the following description, a “phosphorescentsubstance” can be replaced by a “thermally activated delayedfluorescence (TADF) material”, and a “phosphorescent layer” can bereplaced by a “TADF layer”. The TADF material is a substance that canup-convert a triplet excited state into a singlet excited state (i.e.,reverse intersystem crossing is possible) using a little thermal energyand efficiently exhibits light emission (fluorescence) from the singletexcited state. The TADF is efficiently obtained under the conditionwhere the difference in energy between the triplet excitation level andthe singlet excitation level is greater than or equal to 0 eV and lessthan or equal to 0.2 eV, preferably greater than or equal to 0 eV andless than or equal to 0.1 eV. The phosphorescent substance and the TADFmaterial are both substances that can convert triplet excitation energyinto luminescence.

Embodiment 2

In this embodiment, a detailed example of the structure of thelight-emitting element described in Embodiment 1 is described below withreference to FIGS. 1A and 1B.

A light-emitting element in this embodiment includes, between a pair ofelectrodes, an EL layer including a plurality of layers. In thisembodiment, the light-emitting element includes the first electrode 101,the second electrode 102, and the EL layer 103 provided between thefirst electrode 101 and the second electrode 102. Note that in thisembodiment, the first electrode 101 functions as an anode and the secondelectrode 102 functions as a cathode. In other words, when voltage isapplied between the first electrode 101 and the second electrode 102 sothat the potential of the first electrode 101 is higher than that of thesecond electrode 102, light emission can be obtained.

Since the first electrode 101 functions as the anode, the firstelectrode 101 is preferably formed using any of metals, alloys,electrically conductive compounds with a high work function(specifically, a work function of 4.0 eV or more), mixtures thereof, andthe like. Specific examples include indium oxide-tin oxide (ITO: indiumtin oxide), indium oxide-tin oxide containing silicon or silicon oxide,indium oxide-zinc oxide, and indium oxide containing tungsten oxide andzinc oxide (IWZO). Films of these electrically conductive metal oxidesare usually formed by a sputtering method but may be formed byapplication of a sol-gel method or the like. For example, indiumoxide-zinc oxide is deposited by a sputtering method using a targetobtained by adding 1 wt % to 20 wt % of zinc oxide to indium oxide. Afilm of indium oxide containing tungsten oxide and zinc oxide (IWZO) canbe formed by a sputtering method using a target in which tungsten oxideand zinc oxide are added to indium oxide at 0.5 wt % to 5 wt % and 0.1wt % to 1 wt %, respectively. Besides, gold (Au), platinum (Pt), nickel(Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt(Co), copper (Cu), palladium (Pd), nitrides of metal materials (e.g.,titanium nitride), and the like can be given. Graphene can also be used.Note that when a composite material described later is used for a layerthat is in contact with the first electrode 101 in the EL layer 103, anelectrode material can be selected regardless of its work function.

There is no particular limitation on the stacked-layer structure of theEL layer 103 as long as the light-emitting layer 113 has the structuredescribed in Embodiment 1. For example, the EL layer 103 can be formedby combining a hole-injection layer, a hole-transport layer, thelight-emitting layer, an electron-transport layer, an electron-injectionlayer, a carrier-blocking layer, an intermediate layer, and the like asappropriate. In this embodiment, the EL layer 103 has a structure inwhich the hole-injection layer 111, the hole-transport layer 112, thelight-emitting layer 113, the electron-transport layer 114, and theelectron-injection layer 115 are stacked in this order over the firstelectrode 101. Specific examples of materials used for each layer aregiven below.

The hole-injection layer 111 is a layer containing a substance having ahigh hole-injection property. Molybdenum oxide, vanadium oxide,ruthenium oxide, tungsten oxide, manganese oxide, or the like can beused. Alternatively, the hole-injection layer 111 can be formed using aphthalocyanine-based compound such as phthalocyanine (abbreviation:H₂Pc) or copper phthalocyanine (abbreviation: CuPc); an aromatic aminecompound such as4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation:DPAB) orN,N′-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine(abbreviation: DNTPD); a high molecule compound such aspoly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS);or the like.

Alternatively, a composite material in which a substance having ahole-transport property contains a substance having an acceptor propertycan be used for the hole-injection layer 111. Note that the use of sucha substance having a hole-transport property which contains a substancehaving an acceptor property enables selection of a material used to foiman electrode regardless of its work function. In other words, besides amaterial having a high work function, a material having a low workfunction can be used for the first electrode 101. As the acceptorsubstance, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane(abbreviation: F₄-TCNQ), chloranil, and the like can be given. Inaddition, transition metal oxides can be given. Moreover, oxides ofmetals belonging to Groups 4 to 8 of the periodic table can be used.Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromiumoxide, molybdenum oxide, tungsten oxide, manganese oxide, and rheniumoxide are preferable because of their high electron-acceptingproperties. Among these, molybdenum oxide is especially preferablebecause it is stable in the air, has a low hygroscopic property, and iseasily handled.

As the substance having a hole-transport property used for the compositematerial, any of a variety of organic compounds such as aromatic aminecompounds, carbazole derivatives, aromatic hydrocarbons, and highmolecular compounds (e.g., oligomers, dendrimers, or polymers) can beused. Note that the organic compound used for the composite material ispreferably an organic compound having a high hole-transport property.Specifically, a substance having a hole mobility of 10⁻⁶ cm²/Vs orhigher is preferably used. Specific examples of the organic compoundthat can be used as a substance having a hole-transport property in thecomposite material are given below.

Examples of the aromatic amine compounds areN,N′-di(p-tolyl)-N,N′-diphenyl-p-phenylenediamine (abbreviation:DTDPPA), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl(abbreviation: DPAB), N,N′-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine(abbreviation: DNTPD), and1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene(abbreviation: DPA3B).

Specific examples of the carbazole derivatives that can be used for thecomposite material are3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA1),3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA2), and3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole(abbreviation: PCzPCN1).

Other examples of the carbazole derivatives that can be used for thecomposite material are 4,4′-di(N-carbazolyebiphenyl (abbreviation: CBP),1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB),9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), and1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene.

Examples of the aromatic hydrocarbon that can be used for the compositematerial are 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation:t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene,9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA),2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA),9,10-di(2-naphthyl)anthracene (abbreviation: DNA),9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene(abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene(abbreviation: DMNA),2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene,9,10-bis[2-(1-naphthyl)phenyl]anthracene,2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene,2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9′-bianthryl,10,10′-diphenyl-9,9′-bianthryl,10,10′-bis(2-phenylphenyl)-9,9′-bianthryl,10,10-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9′-bianthryl, anthracene,tetracene, rubrene, perylene, and 2,5,8,11-tetra(tert-butyl)perylene.Other examples are pentacene and coronene. The aromatic hydrocarbon thathas a hole mobility of 1×10⁴ cm²/Vs or higher and has 14 to 42 carbonatoms is particularly preferable.

Note that the aromatic hydrocarbons that can be used for the compositematerial may have a vinyl skeleton. Examples of the aromatic hydrocarbonhaving a vinyl group include 4,4′-bis(2,2-diphenylvinyl)biphenyl(abbreviation: DPVBi) and9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

Other examples are high molecular compounds such aspoly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine)(abbreviation: PVTPA),poly[N-(4-{N′-[4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino}phenyl)methacrylamide](abbreviation: PTPDMA), andpoly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (abbreviation:poly-TPD).

By providing a hole-injection layer, a high hole-injection property canbe achieved to allow a light-emitting element to be driven at a lowvoltage.

The hole-transport layer 112 is a layer containing a substance having ahole-transport property. Examples of the substance having ahole-transport property are aromatic amine compounds such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB),N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: TPD), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine(abbreviation: TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine(abbreviation: MTDATA),4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(abbreviation: BSPB), and4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP).The substances listed here have high hole-transport properties and aremainly ones that have a hole mobility of 10⁻⁶ cm²/Vs or higher. Anorganic compound given as an example of the substance having ahole-transport property in the composite material described above canalso be used for the hole-transport layer 112. Moreover, a highmolecular compound such as poly(N-vinylcarbazole) (abbreviation: PVK)and poly(4-vinyltriphenylamine) (abbreviation: PVTPA) can also be used.Note that the layer that contains a substance having a hole-transportproperty is not limited to a single layer, and may be a stack of two ormore layers including any of the above substances.

In the case where the first light-emitting layer 113 a is provided onthe anode side in the light-emitting element of one embodiment of thepresent invention, the HOMO level of a substance used for thehole-transport layer 112 and the HOMO level of a host material in thefirst light-emitting layer 113 a are preferably close to each other (anenergy difference of 0.2 eV or less). This can prevent capture of toomany holes by trap states and enables holes to flow into the firstlight-emitting layer 113 a and the second light-emitting layer 113 b.Thus, fluorescence and phosphorescence can be easily obtained in abalanced manner with high efficiency.

The light-emitting layer 113 has the structure of the light-emittinglayer 113 that is described in Embodiment 1. In other words, the firstlight-emitting layer 113 a and the second light-emitting layer 113 b arestacked in this order over the first electrode. A host material and afluorescent substance are contained in the first light-emitting layer113 a. A first organic compound, a second organic compound, and asubstance that can convert triplet excitation energy into luminescence(a phosphorescent compound or a TADF material) are contained in thesecond light-emitting layer 113 b. In the light-emitting element of thisembodiment, a combination of the first organic compound and the secondorganic compound forms an exciplex. The exciplex can provide energy forthe substance that can convert triplet excitation energy intoluminescence, so that light can be efficiently emitted from both of thefirst light-emitting layer 113 a and the second light-emitting layer 113b.

Examples of a material that can be used as the fluorescent substance inthe first light-emitting layer 113 a are given below. Fluorescentmaterials other than those given below can also be used.

Examples of the fluorescent substance are5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2′-bipyridine (abbreviation:PAP2BPy), 5,6-bis[4′-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2′-bipyridine(abbreviation: PAPP2BPy),N,N′-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-N,N′-diphenyl-pyrene-1,6-diamine(abbreviation: 1,6FLPAPrn),N,N′-bis(3-methylphenyl)-N,N′-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPm),N,N′-bis[4-(9H-carbazol-9-yl)phenyl]-N,N′-diphenylstilbene-4,4′-diamine(abbreviation: YGA2S),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA),4-(9H-carbazol-9-yl)-4′-(9,10-diphenyl-2-anthryl)triphenylamine(abbreviation: 2YGAPPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene(abbreviation: TBP),4-(10-phenyl-9-anthryl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBAPA),N,N″-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[NAN-triphenyl-1,4-phenylenediamine](abbreviation: DPABPA),N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: 2PCAPPA),N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N′,N′-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPPA),N,N,N′,N′,N″,N″,N′″,N′″-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine(abbreviation: DBC1), coumarin 30,N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCABPhA),N-(9,10-diphenyl-2-anthryl)-N,N′,N′-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,N′,N′-triphenyl-1,4-phenylenediamine(abbreviation: 2DPABPhA),9,10-bis(1,1′-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine(abbreviation: 2YGABPhA), 9-triphenylanthracen-9-amine (abbreviation:DPhAPhA), coumarin 545T, N,N′-diphenylquinacridone (abbreviation: DPQd),rubrene, 5,12-bis(1,1′-biphenyl-4-yl)-6,11-diphenyltetracene(abbreviation: BPT),2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile(abbreviation: DCM1),2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCM2),N,N,N′,N′-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation:p-mPhTD),7,14-diphenyl-N,N,N′,N′-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine(abbreviation: p-mPhAFD),2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTI),2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-ypethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTB),2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile(abbreviation: BisDCM), and2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: BisDCJTM). Condensed aromatic diamine compounds typifiedby pyrenediamine compounds such as 1,6FLPAPm and 1,6mMemFLPAPrn areparticularly preferable because of their high hole-trapping properties,high emission efficiency, and high reliability.

Examples of a substance that can be used as the host material in thefirst light-emitting layer 113 a are given below.

The examples include anthracene compounds such as9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:PCzPA), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole(abbreviation: cgDBCzPA),6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan(abbreviation: 2mBnfPPA), and9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4′-yl}anthracene(abbreviation: FLPPA). The use of a substance having an anthraceneskeleton as the host material enables a light-emitting layer that hashigh emission efficiency and durability to be provided. In particular,CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferable because of theirexcellent characteristics.

A phosphorescent substance and a TADF material can be used as thesubstance that can convert triplet excitation energy into luminescencein the second light-emitting layer 113 b. Examples of the phosphorescentsubstance and the TADF material are given below.

Examples of the phosphorescent substance are an organometallic iridiumcomplex having a 4H-triazole skeleton, such astris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-kN2]phenyl-kC}iridium(III)(abbreviation: Ir(mpptz-dmp)₃),tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III)(abbreviation: Ir(Mptz)₃), ortris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III)(abbreviation: Ir(iPrptz-3b)₃); an organometallic iridium complex havinga 1H-triazole skeleton, such astris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III)(abbreviation: Ir(Mptzl-mp)₃) ortris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III)(abbreviation: Ir(Prptzl-Me)₃); an organometallic iridium complex havingan imidazole skeleton, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation:Ir(iPrpmi)₃), ortris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-Aphenanthridinato]iridium(III)(abbreviation: Ir(dmpimpt-Me)₃); and an organometallic iridium complexin which a phenylpyridine derivative having an electron-withdrawinggroup is a ligand, such asbis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6),bis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III) picolinate(abbreviation: FIrpic), bis{2-[3′,5′-bis(trifluoromethyl)phenyl]pyridinato-N,C^(2′)}iridium(III)picolinate (abbreviation: Ir(CF₃ppy)₂(pic)), orbis[2-(4′,6′-difluorophenyl)pyridinato-N,C²]iridium(III) acetylacetonate(abbreviation: FIr(acac)). These are compounds emitting bluephosphorescence and have an emission peak at 440 nm to 520 nm.

Other examples are organometallic iridium complexes having pyrimidineskeletons, such as tris(4-methyl-6-phenylpyrimidinato)iridium(III)(abbreviation: Ir(mppm)₃),tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation:Ir(tBuppm)₃),(acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III)(abbreviation: Ir(mppm)₂(acac)),(acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III)(abbreviation: Ir(tBuppm)₂(acac)),(acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III)(abbreviation: Ir(nbppm)₂(acac)),(acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III)(abbreviation: Ir(mpmppm)₂(acac)), and(acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III)(abbreviation: Ir(dppm)₂(acac)); organometallic iridium complexes havingpyrazine skeletons, such as(acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III)(abbreviation: Ir(mppr-Me)₂(acac)) and(acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III)(abbreviation: Ir(mppr-iPr)₂(acac)); organometallic iridium complexeshaving pyridine skeletons, such astris(2-phenylpyridinato-N,C^(2′))iridium(III) (abbreviation: Ir(ppy)₃),bis(2-phenylpyridinato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(ppy)₂acac)), bis(benzo[h]quinolinato)iridium(II)acetylacetonate (abbreviation: Ir(bzq)₂(acac)),tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq)₃),tris(2-phenylquinolinato-N,C^(2′))iridium(III) (abbreviation: Ir(pq)₃),and bis(2-phenylquinolinato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(pq)₂(acac)); and a rare earth metal complex such astris(acetylacetonato) (monophenanthroline)terbium(III) (abbreviation:Tb(acac)₃(Phen)). These are mainly compounds emitting greenphosphorescence and have an emission peak at 500 nm to 600 nm. Note thatan organometallic iridium complex having a pyrimidine skeleton hasdistinctively high reliability and emission efficiency and is thusespecially preferable.

Other examples are(diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III)(abbreviation: Ir(5mdppm)₂(dibm)),bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III)(abbreviation: Ir(5mdppm)₂(dpm)), andbis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III)(abbreviation: Ir(d1npm)₂(dpm)); organometallic iridium complexes havingpyrazine skeletons, such as(acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: Ir(tppr)₂(acac)),bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III)(abbreviation: Ir(tppr)₂(dpm)), or(acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III)(abbreviation: Ir(Fdpq)₂(acac)); organometallic iridium complexes havingpyridine skeletons, such astris(1-phenylisoquinolinato-N,C^(2′))iridium(III) (abbreviation:Ir(piq)₃) andbis(1-phenylisoquinolinato-N,C^(2′))iridium(III)acetylacetonate(abbreviation: Ir(piq)₂(acac)); a platinum complex such as2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II)(abbreviation: PtOEP); and rare earth metal complexes such astris(1,3-diphenyl-1,3-propanedionato) (monophenanthroline)europium(III)(abbreviation: Eu(DBM)₃(Phen)) andtris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III)(abbreviation: Eu(TTA)₃(Phen)). These are compounds emitting redphosphorescence and have an emission peak at 600 nm to 700 nm. Theorganometallic iridium complex having a pyrazine skeleton can providered light emission with favorable chromaticity.

Phosphorescent materials other than those given above may be used.

Materials given below can be used as the TADF material.

A fullerene, a derivative thereof, an acridine derivative such asproflavine, eosin, or the like can be used. A metal-containing porphyrinsuch as a porphyrin containing magnesium (Mg), zinc (Zn), cadmium (Cd),tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be used.Examples of the metal-containing porphyrin are a protoporphyrin-tinfluoride complex (SnF₂(Proto IX)), a mesoporphyrin-tin fluoride complex(SnF₂(Meso IX)), a hematoporphyrin-tin fluoride complex (SnF₂(HematoIX)), a coproporphyrin tetramethyl ester-tin fluoride complex(SnF₂(Copro III-4Me)), an octaethylporphyrin-tin fluoride complex(SnF₂(OEP)), an etioporphyrin-tin fluoride complex (SnF₂(Etio I)), andan octaethylporphyrin-platinum chloride complex (PtCl₂(OEP)), which arerepresented by Structural Formulae below.

Alternatively, a heterocyclic compound including a π-electron richheteroaromatic ring and a π-electron deficient heteroaromatic ring canbe used, such as2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine(abbreviation: PIC-TRZ), which is represented by Structural Formulabelow. The heterocyclic compound is preferably used because of theπ-electron rich heteroaromatic ring and the π-electron deficientheteroaromatic ring, for which the electron-transport property and thehole-transport property are high. Note that a substance in which theit-electron rich heteroaromatic ring is directly bonded to theit-electron deficient heteroaromatic ring is particularly preferablyused because the donor property of the π-electron rich heteroaromaticring and the acceptor property of the π-electron deficientheteroaromatic ring are both increased and the energy difference betweenthe S₁ level and the T₁ level becomes small.

There is no particular limitation on the materials that can be used asthe first organic compound and the second organic compound as long asthe combination of the materials satisfies the conditions described inEmbodiment 1. A variety of carrier-transport materials can be selected.

Examples of the material having an electron-transport property are aheterocyclic compound having a polyazole skeleton, such asbis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq₂),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)(abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq),bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), orbis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ); aheterocyclic compound having a polyazole skeleton such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ),1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation:CO11), 2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation: TPBI), or2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole(abbreviation: mDBTBIm-II); a heterocyclic compound having a diazineskeleton, such as2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation:2mDBTPDBq-II),2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mDBTBPDBq-II),2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine(abbreviation: 4,6mPnP2Pm), or4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation:4,6mDBTP2Pm-II); and a heterocyclic compound having a pyridine skeleton,such as 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoline(abbreviation: 2mDBTBPDBQu-II),3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), or1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB). Among theabove materials, a heterocyclic compound having a diazine skeleton and aheterocyclic compound having a pyridine skeleton have high reliabilityand are thus preferable. Specifically, a heterocyclic compound having adiazine (pyrimidine or pyrazine) skeleton has a high electron-transportproperty to contribute to a reduction in drive voltage.

Examples of the material having a hole-transport property are a compoundhaving an aromatic amine skeleton, such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB),N,N-bis(3-methylphenyl)-N,N-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: TPD),4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine(abbreviation: BPAFLP), 4-phenyl-3′-(9-phenylfluoren-9-yl)triphenylamine(abbreviation: mBPAFLP),4-phenyl-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation:PCBA1BP), 4,4′-diphenyl-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBBi1BP),4-(1-naphthyl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBANB),4,4′-di(1-naphthyl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBNBB),9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine(abbreviation: PCBAF), orN-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9′-bifluoren-2-amine(abbreviation: PCBASF); a compound having a carbazole skeleton, such as1,3-bis(N-carbazolyl)benzene (abbreviation: mCP),4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP),3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), or3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP); a compound havinga thiophene skeleton such as4,4′,4′-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation:DBT3P-II),2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene(abbreviation: DBTFLP-III), or4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene(abbreviation: DBTFLP-IV); and a compound having a furan skeleton, suchas 4,4′,4′-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation:DBF3P-II) or4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran(abbreviation: mmDBFFLBi-II). Among the above materials, a compoundhaving an aromatic amine skeleton and a compound having a carbazoleskeleton are preferable because these compounds are highly reliable andhave high hole-transport properties to contribute to a reduction indrive voltage.

Carrier-transport materials can be selected from a variety of substancesas well as from the carrier-transport materials given above. Note thatas the first organic compound and the second organic compound,substances having a triplet level (a difference in energy between aground state and a triplet excited state) higher than the triplet levelof the phosphorescent compound are preferably selected. In addition, itis preferable that the combination of the first organic compound and thesecond organic compound be selected so that an exciplex which exhibitslight emission whose wavelength overlaps a wavelength of alowest-energy-side absorption band of the phosphorescent substance isformed.

Furthermore, the combination of a material having an electron-transportproperty as one of the first organic compound and the second organiccompound and a material having a hole-transport property as the otherorganic compound is advantageous for the formation of an exciplex. Thetransport property of the light-emitting layer can be easily adjustedand a recombination region can be easily adjusted by changing thecontained amount of each compound. The ratio of the contained amount ofthe material having a hole-transport property to the contained amount ofthe material having an electron-transport property may be 1:9 to 9:1.

The light-emitting layer 113 having the above-described structure can beformed by co-evaporation by a vacuum evaporation method, or an inkjetmethod, a spin coating method, a dip coating method, or the like using amixed solution.

Note that although the structure in which the first light-emitting layer113 a is formed on the anode side and the second light-emitting layer113 b is formed on the cathode side is described in this embodiment, thestacking order may be reversed. In other words, the secondlight-emitting layer 113 b may be formed on the anode side and the firstlight-emitting layer 113 a may be formed on the cathode side.

The second light-emitting layer 113 b may be divided into two or morelayers, and the divided layers may contain different light-emittingsubstances. In particular, a structure in which the secondlight-emitting layer 113 b is divided into a first phosphorescent layerthat emits red light (i.e., light having an emission spectrum peak at580 nm to 680 nm) and a second phosphorescent layer that emits greenlight (i.e., light having an emission spectrum peak at 500 nm to 560 nm)and the first light-emitting layer 113 a emits blue light (i.e., lighthaving an emission spectrum peak at 400 nm to 480 nm) is preferablyemployed, in which case white light emission with a favorable colorrendering property can be obtained. Note that in that case, the firstlight-emitting layer 113 a, the first phosphorescent layer, and thesecond phosphorescent layer are preferably stacked in this order forhigh durability. Furthermore the first light-emitting layer 113 a ispreferably formed on the anode side, in which case favorablecharacteristics can be obtained.

The other structure and effect of the light-emitting layer 113 are thesame as those described in Embodiment 1. Embodiment 1 is to be referredto.

The electron-transport layer 114 is a layer containing a substancehaving an electron-transport property. For example, theelectron-transport layer 114 is formed using a metal complex having aquinoline skeleton or a benzoquinoline skeleton, such astris(8-quinolinolato)aluminum (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq₂), orbis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation:BAlq), or the like. A metal complex having an oxazole-based orthiazole-based ligand, such as bis[2-(2-hydroxyphenyl)benzoxazolato]zinc(abbreviation: Zn(BOX)₂) or bis[2-(2-hydroxyphenyl)benzothiazolato]zinc(abbreviation: Zn(BTZ)₂), or the like can also be used. Besides themetal complexes,2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen),bathocuproine (abbreviation: BCP), or the like can also be used. Thesubstances listed here have high electron-transport properties and aremainly ones that have an electron mobility of 10⁻⁶ cm²/Vs or higher.Note that any of the host materials having electron-transportproperties, which are listed above, may be used for theelectron-transport layer 114.

The electron-transport layer 114 is not limited to a single layer, andmay be a stack of two or more layers each containing any of thesubstances listed above.

A layer for controlling transport of electron carriers may be providedbetween the electron-transport layer and the light-emitting layer. Thisis a layer formed by addition of a small amount of a substance having ahigh electron-trapping property to the aforementioned materials having ahigh electron-transport property, and the layer is capable of adjustingcarrier balance by retarding transport of electron carriers. Such astructure is very effective in preventing a problem (e.g., a reductionin element lifetime) caused when electrons pass through thelight-emitting layer.

An electron-injection layer 115 may be provided in contact with thesecond electrode 102 between the electron-transport layer 114 and thesecond electrode 102. For the electron-injection layer 115, an alkalimetal, an alkaline earth metal, or a compound thereof, such as lithiumfluoride (LiF), cesium fluoride (CsF), or calcium fluoride (CaF₂), canbe used. For example, a layer that is formed using a substance having anelectron-transport property and contains an alkali metal, an alkalineearth metal, or a compound thereof can be used. Note that a layer thatis formed using a substance having an electron-transport property andcontains an alkali metal or an alkaline earth metal is preferably usedas the electron-injection layer 115, in which case electron injectionfrom the second electrode 102 is efficiently performed.

For the second electrode 102, any of metals, alloys, electricallyconductive compounds, and mixtures thereof which have a low workfunction (specifically, a work function of 3.8 eV or less) or the likecan be used. Specific examples of such a cathode material are elementsbelonging to Groups 1 and 2 of the periodic table, such as alkali metals(e.g., lithium (Li) and cesium (Cs)), magnesium (Mg), calcium (Ca), andstrontium (Sr), alloys thereof (e.g., MgAg and AlLi), rare earth metalssuch as europium (Eu) and ytterbium (Yb), and alloys thereof. However,when the electron-injection layer is provided between the secondelectrode 102 and the electron-transport layer, for the second electrode102, any of a variety of conductive materials such as Al, Ag, ITO, orindium oxide-tin oxide containing silicon or silicon oxide can be usedregardless of the work function. These conductive materials can bedeposited by a sputtering method, an ink-jet method, a spin coatingmethod, or the like.

Any of a variety of methods can be used to form the EL layer 103regardless whether it is a dry process or a wet process. For example, avacuum evaporation method, an ink-jet method, or a spin coating methodmay be employed. A different formation method may be employed for eachelectrode or each layer.

The electrode may be formed by a wet method using a sol-gel method, orby a wet method using paste of a metal material. Alternatively, theelectrode may be formed by a dry method such as a sputtering method or avacuum evaporation method.

In the light-emitting element having the above-described structure,current flows because of a potential difference between the firstelectrode 101 and the second electrode 102, and holes and electronsrecombine in the light-emitting layer 113 that contains a substance witha high light-emitting property, so that light is emitted. That is, alight-emitting region is formed in the light-emitting layer 113.

Light emission is extracted out through one or both of the firstelectrode 101 and the second electrode 102. Therefore, one or both ofthe first electrode 101 and the second electrode 102 arelight-transmitting electrodes.

Note that the structure of EL layer 103 provided between the firstelectrode 101 and the second electrode 102 is not limited to theabove-described structure. Preferably, a light-emitting region whereholes and electrons recombine is positioned away from the firstelectrode 101 and the second electrode 102 so that quenching due to theproximity of the light-emitting region and a metal used for electrodesand carrier-injection layers can be prevented.

In order that transfer of energy from an exciton generated in thelight-emitting layer can be suppressed, preferably, the hole-transportlayer and the electron-transport layer that are in contact with thelight-emitting layer 113, particularly a carrier-transport layer incontact with a side closer to the light-emitting region in thelight-emitting layer 113, are formed using a substance having a widerband gap than the light-emitting substance of the light-emitting layeror the emission center substance included in the light-emitting layer.

A light-emitting element in this embodiment is preferably fabricatedover a substrate of glass, plastic, or the like. As the way of stackinglayers over the substrate, layers may be sequentially stacked from thefirst electrode 101 side or sequentially stacked from the secondelectrode 102 side. In a light-emitting device, although onelight-emitting element may be fabricated over one substrate, a pluralityof light-emitting elements may be fabricated over one substrate. With aplurality of light-emitting elements as described above formed over onesubstrate, a lighting device in which elements are separated or apassive-matrix light-emitting device can be fabricated. A light-emittingelement may be formed over an electrode electrically connected to anfield-effect transistor (FET), for example, that is formed over asubstrate of glass, plastic, or the like, so that an active matrixlight-emitting device in which the FET controls the drive of thelight-emitting element can be fabricated. Note that the structure of theFET is not particularly limited. In addition, crystallinity of asemiconductor used for the FET is not particularly limited either; anamorphous semiconductor or a crystalline semiconductor may be used. Inaddition, a driver circuit formed in an FET substrate may be formed withan n-type FET and a p-type FET, or with either an n-type FET or a p-typeFET.

Note that this embodiment can be combined with any of the otherembodiments as appropriate.

Next, one mode a light-emitting element with a structure in which aplurality of light-emitting units are stacked (hereinafter also referredto as a stacked-type element) is described with reference to FIG. 1B. Inthis light-emitting element, a plurality of light-emitting units areprovided between a first electrode and a second electrode. Onelight-emitting unit has a structure similar to that of the EL layer 103,which is illustrated in FIG. 1A. In other words, the light-emittingelement illustrated in FIG. 1A includes a single light-emitting unit;the light-emitting element in this embodiment includes a plurality oflight-emitting units.

In FIG. 1B, a first light-emitting unit 511 and a second light-emittingunit 512 are stacked between a first electrode 501 and a secondelectrode 502, and a charge-generation layer 513 is provided between thefirst light-emitting unit 511 and the second light-emitting unit 512.The first electrode 501 and the second electrode 502 correspond,respectively, to the first electrode 101 and the second electrode 102illustrated in FIG. 1A, and the materials given in the description forFIG. 1A can be used. Furthermore, the first light-emitting unit 511 andthe second light-emitting unit 512 may have the same structure ordifferent structures.

The charge-generation layer 513 contains a composite material of anorganic compound and a metal oxide. As the composite material of theorganic compound and the metal oxide, the composite material which canbe used for the hole-injection layer 111 illustrated in FIG. 1A can beused. A compound having a hole mobility of 1×10⁻⁶ cm²/Vs or higher ispreferably used as the organic compound. Note that any other substancemay be used as long as the substance has a hole-transport propertyhigher than an electron-transport property. The composite material ofthe organic compound and the metal oxide can achieve low-voltage drivingand low-current driving because of the excellent carrier-injectionproperty and carrier-transport property. Note that when a surface of alight-emitting unit on the anode side is in contact with a chargegeneration layer, the charge generation layer can also serve as ahole-transport layer of the light-emitting unit; thus, a hole-transportlayer does not need to be formed in the light-emitting unit.

The charge generation layer 513 may have a stacked-layer structure of alayer containing the composite material of an organic compound and ametal oxide and a layer containing another material. For example, alayer containing a composite material of the organic compound and themetal oxide may be combined with a layer containing a compound of asubstance selected from substances with an electron-donating propertyand a compound with a high electron-transport property. Moreover, alayer containing a composite material of the organic compound and themetal oxide may be combined with a transparent conductive film.

The charge generation layer 513 interposed between the firstlight-emitting unit 511 and the second light-emitting unit 512 may haveany structure as long as electrons can be injected to a light-emittingunit on one side and holes can be injected to a light-emitting unit onthe other side when a voltage is applied between the first electrode 501and the second electrode 502. For example, in FIG. 1B, any layer can beused as the charge generation layer 513 as long as the layer injectselectrons into the first light-emitting unit 511 and holes into thesecond light-emitting unit 512 when a voltage is applied such that thepotential of the first electrode is higher than that of the secondelectrode.

The light-emitting element having two light-emitting units is describedwith reference to FIG. 1B; however, the present invention can besimilarly applied to a light-emitting element in which three or morelight-emitting units are stacked. With a plurality of light-emittingunits partitioned by the charge generation layer between a pair ofelectrodes as in the light-emitting element of this embodiment, it ispossible to provide a light-emitting element which can emit light withhigh luminance with the current density kept low and has a longlifetime. Moreover, it is possible to achieve a light-emitting devicewhich can be driven at low voltage and has low power consumption.

When the above-described structure of the light-emitting layer 113 isapplied to at least one of the plurality of units, the number ofmanufacturing steps of the unit can be reduced; thus, a multicolorlight-emitting element which is advantageous for practical applicationcan be provided.

The above-described structure can be combined with any of the structuresin this embodiment and the other embodiments.

Embodiment 3

In this embodiment, a light-emitting device including the light-emittingelement described in Embodiment 1 or 2 is described.

In this embodiment, the light-emitting device fabricated using thelight-emitting element described in Embodiment 1 or 2 is described withreference to FIGS. 2A and 2B. Note that FIG. 2A is a top viewillustrating the light-emitting device and FIG. 2B is a cross-sectionalview taken along lines A-B and C-D in FIG. 2A. This light-emittingdevice includes a driver circuit portion (source line driver circuit)601, a pixel portion 602, and a driver circuit portion (gate line drivercircuit) 603, which control light emission of the light-emitting elementand denoted by dotted lines. A reference numeral 604 denotes a sealingsubstrate; 605, a sealant; and 607, a space surrounded by the sealant605.

Note that a lead wiring 608 is a wiring for transmitting signals to beinput to the source line driver circuit 601 and the gate line drivercircuit 603 and for receiving a video signal, a clock signal, a startsignal, a reset signal, and the like from an FPC (flexible printedcircuit) 609 serving as an external input terminal. Although only theFPC is illustrated here, a printed wiring board (PWB) may be attached tothe FPC. The light-emitting device in the present specificationincludes, in its category, not only the light-emitting device itself butalso the light-emitting device provided with the FPC or the PWB.

Next, a cross-sectional structure is described with reference to FIG.2B. The driver circuit portion and the pixel portion are formed over anelement substrate 610. The source line driver circuit 601, which is adriver circuit portion, and one of the pixels in the pixel portion 602are illustrated here.

In the source line driver circuit 601, a CMOS circuit is formed in whichan n-channel FET 623 and a p-channel FET 624 are combined. In addition,the driver circuit may be formed with any of a variety of circuits suchas a CMOS circuit, a PMOS circuit, and an NMOS circuit. Although adriver-integrated type in which a driver circuit is formed over asubstrate is described in this embodiment, one embodiment of the presentinvention is not limited to this type, and the driver circuit can beformed outside the substrate.

The pixel portion 602 includes a plurality of pixels including aswitching FET 611, a current controlling FET 612, and a first electrode613 electrically connected to a drain of the current controlling FET612. An insulator 614 is formed to cover end portions of the firstelectrode 613. In this embodiment, the insulator 614 is formed using apositive photosensitive acrylic resin film.

The insulator 614 preferably has a curved surface with curvature at anupper end portion or a lower end portion thereof. For example, in thecase where a positive photosensitive acrylic resin is used for amaterial of the insulator 614, only the upper end portion of theinsulator 614 has a surface with a curvature radius (0.2 μm to 3 μm). Asthe insulator 614, either a negative photosensitive resin or a positivephotosensitive resin can be used.

An EL layer 616 and a second electrode 617 are formed over the firstelectrode 613. As a material used for the first electrode 613functioning as an anode, a material having a high work function ispreferably used. For example, a single-layer film of an ITO film, anindium tin oxide film containing silicon, an indium oxide filmcontaining zinc oxide at 2 wt % to 20 wt %, a titanium nitride film, achromium film, a tungsten film, a Zn film, a Pt film, or the like, astack including a titanium nitride film and a film containing aluminumas its main component, a stack including three layers of a titaniumnitride film, a film containing aluminum as its main component, and atitanium nitride film, or the like can be used. The stacked-layerstructure enables low wiring resistance, favorable ohmic contact, and afunction as an anode.

The EL layer 616 is formed by any of a variety of methods such as anevaporation method using an evaporation mask, an inkjet method, and aspin coating method. The EL layer 616 has a structure similar to thatdescribed in Embodiment 1 or 2. As another material contained in the ELlayer 616, any of low-molecular-weight compounds andhigh-molecular-weight compounds (including oligomers and dendrimers) maybe used.

As a material used for the second electrode 617, which is formed overthe EL layer 616 and functions as a cathode, a material having a lowwork function (e.g., Al, Mg, Li, Ca, or an alloy or a compound thereof,such as MgAg, MgIn, or AlLi) is preferably used. In the case where lightgenerated in the EL layer 616 passes through the second electrode 617, astack of a thin metal film and a transparent conductive film (e.g., ITO,indium oxide containing zinc oxide at 2 wt % to 20 wt %, indium tinoxide containing silicon, or zinc oxide (ZnO)) is preferably used forthe second electrode 617.

Note that the light-emitting element is formed with the first electrode613, the EL layer 616, and the second electrode 617. The light-emittingelement has the structure described in Embodiment 1 or 2. In thelight-emitting device of this embodiment, the pixel portion, whichincludes a plurality of light-emitting elements, may include both of thelight-emitting element described in Embodiment 1 or 2 and alight-emitting element having a different structure.

The sealing substrate 604 is attached to the element substrate 610 withthe sealant 605, so that the light-emitting element 618 is provided inthe space 607 surrounded by the element substrate 610, the sealingsubstrate 604, and the sealant 605. The space 607 may be filled withfiller, and may be filled with an inert gas (such as nitrogen or argon),or the sealant 605. It is preferable that the sealing substrate beprovided with a recessed portion and the drying agent 625 be provided inthe recessed portion, in which case deterioration due to influence ofmoisture can be suppressed.

An epoxy-based resin or glass frit is preferably used for the sealant605. It is preferable that such a material not transmit moisture oroxygen as much as possible. As the sealing substrate 604, a glasssubstrate, a quartz substrate, or a plastic substrate formed of fiberreinforced plastic (FRP), poly(vinyl fluoride) (PVF), polyester,acrylic, or the like can be used.

As described above, the light-emitting device that includes thelight-emitting element described in Embodiment 1 or 2 can be obtained.

FIGS. 3A and 3B each illustrate an example of a light-emitting device inwhich full color display is achieved by forming a light-emitting elementexhibiting white light emission and providing a coloring layer (a colorfilter) and the like. In FIG. 3A, a substrate 1001, a base insulatingfilm 1002, a gate insulating film 1003, gate electrodes 1006, 1007, and1008, a first interlayer insulating film 1020, a second interlayerinsulating film 1021, a peripheral portion 1042, a pixel portion 1040, adriver circuit portion 1041, first electrodes 1024W, 1024R, 1024G, and1024B of light-emitting elements, a partition wall 1025, an EL layer1028, a second electrode 1029 of the light-emitting elements, a sealingsubstrate 1031, a sealant 1032, and the like are illustrated.

In FIG. 3A, coloring layers (a red coloring layer 1034R, a greencoloring layer 1034G, and a blue coloring layer 1034B) are provided on atransparent base material 1033. A black layer (a black matrix) 1035 maybe additionally provided. The transparent base material 1033 providedwith the coloring layers and the black layer is positioned and fixed tothe substrate 1001. Note that the coloring layers and the black layerare covered with an overcoat layer 1036. In FIG. 3A, light emitted frompart of the light-emitting layer does not pass through the coloringlayers, while light emitted from the other part of the light-emittinglayer passes through the coloring layers. Since light that does not passthrough the coloring layers is white and light that passes through anyone of the coloring layers is red, blue, or green, an image can bedisplayed using pixels of the four colors.

FIG. 3B illustrates an example in which the coloring layers (the redcoloring layer 1034R, the green coloring layer 1034G, and the bluecoloring layer 1034B) are provided between the gate insulating film 1003and the first interlayer insulating film 1020. As shown in FIG. 3B, thecoloring layers may be provided between the substrate 1001 and thesealing substrate 1031.

The above-described light-emitting device has a structure in which lightis extracted from the substrate 1001 side where the FETs are formed (abottom emission structure), but may have a structure in which light isextracted from the sealing substrate 1031 side (a top emissionstructure). FIG. 4 is a cross-sectional view of a light-emitting devicehaving a top emission structure. In this case, a substrate that does nottransmit light can be used as the substrate 1001. The process up to thestep of forming of a connection electrode which connects the FET and theanode of the light-emitting element is performed in a manner similar tothat of the light-emitting device having a bottom emission structure.Then, a third interlayer insulating film 1037 is formed to cover anelectrode 1022. This insulating film may have a planarization function.The third interlayer insulating film 1037 can be formed using a materialsimilar to that of the second interlayer insulating film, and canalternatively be formed using any other materials.

The first electrodes 1024W, 1024R, 1024G, and 1024B of thelight-emitting elements each serve as an anode here, but may serve as acathode. In the case of a light-emitting device having a top emissionstructure as illustrated in FIG. 4, the first electrodes are preferablyreflective electrodes. The EL layer 1028 is formed to have a structuresimilar to the structure of the EL layer 103 described in Embodiment 1or 2, with which white light emission can be obtained.

In the case of a top emission structure as illustrated in FIG. 4,sealing can be performed with the sealing substrate 1031 on which thecoloring layers (the red coloring layer 1034R, the green coloring layer1034G, and the blue coloring layer 1034B) are provided. The sealingsubstrate 1031 may be provided with the black layer (the black matrix)1035 that is positioned between pixels. The coloring layers (the redcoloring layer 1034R, the green coloring layer 1034Q and the bluecoloring layer 1034B) and the black layer (the black matrix) 1035 may becovered with an overcoat layer. Note that a light-transmitting substrateis used as the sealing substrate 1031.

Although an example in which full color display is performed using fourcolors of red, green, blue, and white is shown here, there is noparticular limitation and full color display using three colors of red,green, and blue may be performed.

The light-emitting device in this embodiment is fabricated using thelight-emitting element described in Embodiment 1 or 2 and thus can havefavorable characteristics. Specifically, since the light-emittingelement described in Embodiment 1 or 2 has high emission efficiency, thelight-emitting device can have reduced power consumption. In addition,since the light-emitting element is easily mass-produced, thelight-emitting device can be provided at low cost.

An active matrix light-emitting device is described above, whereas apassive matrix light-emitting device is described below. FIGS. 5A and 5Billustrate a passive matrix light-emitting device fabricated using thepresent invention. FIG. 5A is a perspective view of the light-emittingdevice, and FIG. 5B is a cross-sectional view taken along the line X-Yin FIG. 5A. In FIGS. 5A and 5B, an EL layer 955 is provided between anelectrode 952 and an electrode 956 over a substrate 951. An end portionof the electrode 952 is covered with an insulating layer 953. Inaddition, a partition layer 954 is provided over the insulating layer953. The sidewalls of the partition layer 954 slope so that the distancebetween one sidewall and the other sidewall gradually decreases towardthe surface of the substrate. In other words, a cross section takenalong the direction of the short side of the partition layer 954 istrapezoidal, and the base (a side which is in the same direction as aplane direction of the insulating layer 953 and in contact with theinsulating layer 953) is shorter than the upper side (a side which is inthe same direction as the plane direction of the insulating layer 953and not in contact with the insulating layer 953). By providing thepartition layer 954 in such a manner, a defect of the light-emittingelement due to static electricity or the like can be prevented. Thepassive matrix light-emitting device also includes the light-emittingelement described in Embodiment 1 or 2, which has high emissionefficiency, and thus can have less power consumption. Moreover, sincethe light-emitting element is easily mass-produced, the light-emittingdevice can be provided at low cost.

Since many minute light-emitting elements arranged in a matrix in thelight-emitting device described above can each be controlled, thelight-emitting device can be suitably used as a display device fordisplaying images.

This embodiment can be freely combined with any of the otherembodiments.

Embodiment 4

In this embodiment, an example in which the light-emitting elementdescribed in Embodiment 1 or 2 is used for a lighting device isdescribed with reference to FIGS. 6A and 6B. FIG. 6B is a top view ofthe lighting device, and FIG. 6A is a cross-sectional view taken alongthe line e-f in FIG. 6B.

In the lighting device in this embodiment, a first electrode 401 isformed over a substrate 400 which is a support and has alight-transmitting property. The first electrode 401 corresponds to thefirst electrode 101 in Embodiment 1. When light is extracted through thefirst electrode 401 side, the first electrode 401 is formed using amaterial having a light-transmitting property.

A pad 412 for applying voltage to a second electrode 404 is providedover the substrate 400.

An EL layer 403 is formed over the first electrode 401. The structure ofthe EL layer 403 corresponds to, for example, the structure of the ELlayer 103 in Embodiment 1, or the structure in which the light-emittingunits 511 and 512 and the charge-generation layer 513 are combined. Forthese structures, the description in Embodiment 1 can be referred to.

The second electrode 404 is formed to cover the EL layer 403. The secondelectrode 404 corresponds to the second electrode 102 in Embodiment 1.The second electrode 404 is formed using a material having highreflectance when light is extracted through the first electrode 401side. The second electrode 404 is connected to the pad 412, wherebyvoltage is applied thereto.

As described above, the lighting device described in this embodimentincludes a light-emitting element including the first electrode 401, theEL layer 403, and the second electrode 404. Since the light-emittingelement has high emission efficiency, the lighting device in thisembodiment can have low power consumption.

The light-emitting element having the above structure is fixed to asealing substrate 407 with sealants 405 and 406 and sealing isperformed, whereby the lighting device is completed. It is possible touse only either the sealant 405 or the sealant 406. In addition, theinner sealant 406 (not illustrated in FIG. 6B) can be mixed with adesiccant that enables moisture to be adsorbed, which results inimproved reliability.

When parts of the pad 412 and the first electrode 401 are extended tothe outside of the sealants 405 and 406, the extended parts can serve asexternal input terminals. An IC chip 420 mounted with a converter or thelike may be provided over the external input terminals.

As described above, since the lighting device described in thisembodiment includes the light-emitting element described in Embodiment 1or 2 as an EL element, the lighting device can have low powerconsumption. In addition, the light-emitting device can have low drivevoltage. Furthermore, the light-emitting device can be inexpensive.

Embodiment 5

In this embodiment, examples of electronic appliances each including thelight-emitting element described in Embodiment 1 or 2 are described. Thelight-emitting element described in Embodiment 1 or 2 has high emissionefficiency and reduced power consumption. As a result, the electronicappliances described in this embodiment can each include alight-emitting portion having reduced power consumption. Thelight-emitting element described in Embodiment 1 or 2 includes a smallernumber of layers to be formed; thus, the electronic appliances can beinexpensive.

Examples of the electronic appliance to which the above light-emittingelement is applied include television devices (also referred to as TV ortelevision receivers), monitors for computers and the like, cameras suchas digital cameras and digital video cameras, digital photo frames,mobile phones (also referred to as cellular phones or cellular phonedevices), portable game machines, portable information terminals, audioplayback devices, and large game machines such as pachinko machines.Specific examples of these electronic appliances are given below.

FIG. 7A illustrates an example of a television device. In the televisiondevice, a display portion 7103 is incorporated in a housing 7101. Inaddition, here, the housing 7101 is supported by a stand 7105. Imagescan be displayed on the display portion 7103 where the light-emittingelements described in Embodiment 1 or 2 are arranged in a matrix.

The television device can be operated with an operation switch of thehousing 7101 or a separate remote controller 7110. With operation keys7109 of the remote controller 7110, channels and volume can becontrolled and images displayed on the display portion 7103 can becontrolled. Furthermore, the remote controller 7110 may be provided witha display portion 7107 for displaying data output from the remotecontroller 7110.

Note that the television device is provided with a receiver, a modem,and the like. With the receiver, general television broadcasts can bereceived. Moreover, when the display device is connected to acommunication network with or without wires via the modem, one-way (froma sender to a receiver) or two-way (between a sender and a receiver orbetween receivers) data communication can be performed.

FIG. 7B1 illustrates a computer that includes a main body 7201, ahousing 7202, a display portion 7203, a keyboard 7204, an externalconnection port 7205, a pointing device 7206, and the like. Note thatthis computer is manufactured by using light-emitting elements arrangedin a matrix in the display portion 7203, which are the same as thatdescribed in Embodiment 1 or 2. The computer illustrated in FIG. 7B 1may have a structure illustrated in FIG. 7B2. A computer illustrated inFIG. 7B2 is provided with a second display portion 7210 instead of thekeyboard 7204 and the pointing device 7206. The second display portion7210 is a touch screen, and input can be performed by operation ofdisplay for input on the second display portion 7210 with a finger or adedicated pen. The second display portion 7210 can also display imagesother than the display for input. The display portion 7203 may also be atouchscreen. Connecting the two screens with a hinge can preventtroubles; for example, the screens can be prevented from being crackedor broken while the computer is being stored or carried. Note that thiscomputer is manufactured by arranging the light-emitting elementsdescribed in Embodiment 1 or 2 in a matrix in the display portion 7203.

FIG. 7C illustrates a portable game machine that includes two housings,a housing 7301 and a housing 7302, which are connected with a jointportion 7303 so that the portable game machine can be opened or folded.The housing 7301 incorporates a display portion 7304 including thelight-emitting elements described in Embodiment 1 or 2 and arranged in amatrix, and the housing 7302 incorporates a display portion 7305. Inaddition, the portable game machine illustrated in FIG. 7C includes aspeaker portion 7306, a recording medium insertion portion 7307, an LEDlamp 7308, an input means (an operation key 7309, a connection terminal7310, a sensor 7311 (a sensor having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared rays), or a microphone 7312), and thelike. Needless to say, the structure of the portable game machine is notlimited to the above structure as long as the display portion includingthe light-emitting elements each of which is described in Embodiment 1or 2 and which are arranged in a matrix is used as at least either thedisplay portion 7304 or the display portion 7305, or both, and thestructure can include other accessories as appropriate. The portablegame machine illustrated in FIG. 7C has a function of reading out aprogram or data stored in a storage medium to display it on the displayportion, and a function of sharing information with another portablegame machine by wireless communication. The portable game machineillustrated in FIG. 7C can have a variety of functions withoutlimitation to the above functions.

FIG. 7D illustrates an example of a mobile phone. The mobile phone isprovided with a display portion 7402 incorporated in a housing 7401, anoperation button 7403, an external connection port 7404, a speaker 7405,a microphone 7406, and the like. Note that the mobile phone has thedisplay portion 7402 including the light-emitting elements each of whichis described in Embodiment 1 or 2 and which are arranged in a matrix.

When the display portion 7402 of the mobile phone illustrated in FIG. 7Dis touched with a finger or the like, data can be input into the mobilephone. In this case, operations such as making a call and creating ane-mail can be performed by touch on the display portion 7402 with afinger or the like.

There are mainly three screen modes of the display portion 7402. Thefirst mode is a display mode mainly for displaying images. The secondmode is an input mode mainly for inputting data such as text. The thirdmode is a display-and-input mode in which two modes of the display modeand the input mode are combined.

For example, in the case of making a call or composing an e-mail, a textinput mode mainly for inputting text is selected for the display portion7402 so that text displayed on a screen can be inputted. In this case,it is preferable to display a keyboard or number buttons on almost theentire screen of the display portion 7402.

When a detection device which includes a sensor for detectinginclination, such as a gyroscope or an acceleration sensor, is providedinside the mobile phone, the direction of the mobile phone (whether themobile phone is placed horizontally or vertically for a landscape modeor a portrait mode) is determined so that display on the screen of thedisplay portion 7402 can be automatically switched.

The screen modes are switched by touch on the display portion 7402 oroperation with the operation button 7403 of the housing 7401. The screenmodes can be switched depending on the kind of images displayed on thedisplay portion 7402. For example, when a signal of an image displayedon the display portion is a signal of moving image data, the screen modeis switched to the display mode. When the signal is a signal of textdata, the screen mode is switched to the input mode.

Moreover, in the input mode, when input by touching the display portion7402 is not performed for a certain period while a signal detected by anoptical sensor in the display portion 7402 is detected, the screen modemay be controlled so as to be switched from the input mode to thedisplay mode.

The display portion 7402 may function as an image sensor. For example,an image of a palm print, a fingerprint, or the like is taken by touchon the display portion 7402 with the palm or the finger, wherebypersonal authentication can be performed. In addition, by providing abacklight or a sensing light source that emits a near-infrared light inthe display portion, an image of a finger vein, a palm vein, or the likecan be taken.

Note that the structure described in this embodiment can be combinedwith any of the structures described in Embodiments 1 to 4 asappropriate.

As described above, the application range of the light-emitting deviceincluding the light-emitting element described in Embodiment 1 or 2 isso wide that the light-emitting device can be applied to electronicappliances in a variety of fields. By using the light-emitting elementdescribed in Embodiment 1 or 2, an electronic appliance having reducedpower consumption can be obtained.

FIG. 8 illustrates an example of a liquid crystal display device usingthe light-emitting element described in Embodiment 1 or 2 for abacklight. The liquid crystal display device illustrated in FIG. 8includes a housing 901, a liquid crystal layer 902, a backlight unit903, and a housing 904. The liquid crystal layer 902 is connected to adriver IC 905. The light-emitting element described in Embodiment 1 or 2is used for the backlight unit 903, to which current is supplied througha terminal 906.

The light-emitting element described in Embodiment 1 or 2 is used forthe backlight of the liquid crystal display device; thus, the backlightcan have reduced power consumption. In addition, the use of thelight-emitting element described in Embodiment 2 enables fabrication ofa planar-emission lighting device and further a larger-areaplanar-emission lighting device; therefore, the backlight can be alarger-area backlight, and the liquid crystal display device can also bea larger-area device. Furthermore, the light-emitting device using thelight-emitting element described in Embodiment 2 can be thinner than aconventional one; accordingly, the display device can also be thinner.

FIG. 9 illustrates an example in which the light-emitting elementdescribed in Embodiment 1 or 2 is used for a table lamp that is alighting device. The table lamp illustrated in FIG. 9 includes a housing2001 and a light source 2002. The lighting device described inEmbodiment 4 is used for the light source 2002.

FIG. 10 illustrates an example in which the light-emitting elementdescribed in Embodiment 1 or 2 is used for an indoor lighting device3001. Since the light-emitting element described in Embodiment 1 or 2has reduced power consumption, a lighting device having reduced powerconsumption can be obtained. In addition, since the light-emittingelement described in Embodiment 1 or 2 can have a large area, thelight-emitting element can be used for a large-area lighting device.Furthermore, since the light-emitting element described in Embodiment 1or 2 is thin, the light-emitting element can be used for a lightingdevice having a reduced thickness.

The light-emitting element described in Embodiment 1 or 2 can also beused for an automobile windshield or an automobile dashboard. FIG. 11illustrates one mode in which the light-emitting element described inEmbodiment 2 is used for an automobile windshield and an automobiledashboard. Displays regions 5000 to 5005 each include the light-emittingelement described in Embodiment 1 or 2.

The display region 5000 and the display region 5001 are provided in theautomobile windshield in which the light-emitting elements described inEmbodiment 1 or 2 are incorporated. The light-emitting element describedin Embodiment 1 or 2 can be formed into what is called a see-throughdisplay device, through which the opposite side can be seen, byincluding a first electrode and a second electrode formed of electrodeshaving light-transmitting properties. Such a see-through display devicedoes not hinder the vision and thus can be provided in the automobilewindshield. Note that in the case where a transistor for driving or thelike is provided, a transistor having a light-transmitting property,such as an organic transistor using an organic semiconductor material ora transistor using an oxide semiconductor, is preferably used.

A display region 5002 is provided in a pillar portion in which thelight-emitting element described in Embodiment 1 or 2 are incorporated.The display region 5002 can compensate for the view hindered by thepillar portion by showing an image taken by an imaging unit provided inthe car body. Similarly, the display region 5003 provided in thedashboard can compensate for the view hindered by the car body byshowing an image taken by an imaging unit provided in the outside of thecar body, which leads to elimination of blind areas and enhancement ofsafety. Showing an image so as to compensate for the area that a drivercannot see, makes it possible for the driver to confirm safety easilyand comfortably.

The display region 5004 and the display region 5005 can provide avariety of kinds of information such as navigation data, a speedometer,a tachometer, a mileage, a fuel meter, a gearshift indicator, andair-condition setting. The contents or layout of the display can bechanged by a user as appropriate. Note that such information can also beshown by the display regions 5000 to 5003. The display regions 5000 to5005 can also be used as lighting devices.

The light-emitting element described in Embodiment 1 or 2 can have highemission efficiency and low power consumption. Therefore, load on abattery is small even when a number of large screens such as the displayregions 5000 to 5005 are provided, which provides comfortable use. Forthat reason, the light-emitting device and the lighting device each ofwhich includes the light-emitting element described in Embodiment 1 or 2can be suitably used as an in-vehicle light-emitting device and anin-vehicle lighting device.

FIGS. 12A and 12B illustrate an example of a foldable tablet terminal.In FIG. 12A, the tablet terminal is opened and includes a housing 9630,a display portion 9631 a, a display portion 9631 b, a display-modeswitching button 9034, a power button 9035, a power-saving-modeswitching button 9036, a clip 9033, and an operation button 9038. Notethat in the tablet terminal, one or both of the display portion 9631 aand the display portion 9631 b is/are formed using a light-emittingdevice which includes the light-emitting element described in Embodiment1 or 2.

Part of the display portion 9631 a can be a touchscreen region 9632 aand data can be input when a displayed operation key 9637 is touched.Although a structure in which a half region in the display portion 9631a has only a display function and the other half region also has atouchscreen function is illustrated as an example, the structure of thedisplay portion 9631 a is not limited thereto. The whole area of thedisplay portion 9631 a may have a touchscreen function. For example, thewhole area of the display portion 9631 a can display keyboard buttonsand serve as a touchscreen while the display portion 9631 b can be usedas a display screen.

Like the display portion 9631 a, part of the display portion 9631 b canbe a touchscreen region 9632 b. When a switching button 9639 forshowing/hiding a keyboard on the touchscreen is touched with a finger, astylus, or the like, the keyboard can be displayed on the displayportion 9631 b.

Touch input can be performed concurrently on the touchscreen regions9632 a and 9632 b.

The display-mode switching button 9034 allows switching between aportrait mode and a landscape mode, and between monochrome display andcolor display, for example. With the power-saving-mode switching button9036, the luminance of display can be optimized in accordance with theamount of external light at the time when the tablet terminal is in use,which is detected with an optical sensor incorporated in the tabletterminal. The tablet terminal may include another detection device suchas a sensor for detecting orientation (e.g., a gyroscope or anacceleration sensor) in addition to the optical sensor.

Although the display portion 9631 a and the display portion 9631 b havethe same display area in FIG. 12A, one embodiment of the presentinvention is not limited to this example. The display portion 9631 a andthe display portion 9631 b may have different areas or different displayquality. For example, one of them may be a display panel that candisplay higher-definition images than the other.

In FIG. 12B, the tablet terminal is folded and includes the housing9630, a solar cell 9633, a charge and discharge control circuit 9634, abattery 9635, and a DC-to-DC converter 9636. Note that FIG. 12Billustrates an example in which the charge and discharge control circuit9634 includes the battery 9635 and the DC-to-DC converter 9636.

Since the tablet terminal is foldable, the housing 9630 can be closedwhen the tablet terminal is not used. Thus, the display portions 9631 aand 9631 b can be protected, whereby a tablet terminal with highendurance and high reliability for long-term use can be provided.

The tablet terminal illustrated in FIGS. 12A and 12B can also have afunction of displaying various kinds of data (e.g., a still image, amoving image, and a text image), a function of displaying a calendar, adate, the time, or the like on the display portion, a touch-inputfunction of operating or editing data displayed on the display portionby touch input, a function of controlling processing by various kinds ofsoftware (programs), and the like.

The solar cell 9633, which is attached on the surface of the tabletterminal, supplies electric power to a touchscreen, a display portion,an image signal processor, and the like. Note that the solar cell 9633is preferably provided on one or two surfaces of the housing 9630, inwhich case the battery 9635 can be charged efficiently.

The structure and operation of the charge and discharge control circuit9634 illustrated in FIG. 12B are described with reference to a blockdiagram of FIG. 12C. FIG. 12C illustrates the solar cell 9633, thebattery 9635, the DC-to-DC converter 9636, a converter 9638, switchesSW1 to SW3, and the display portion 9631. The battery 9635, the DC-to-DCconverter 9636, the converter 9638, and the switches SW1 to SW3correspond to the charge and discharge control circuit 9634 in FIG. 12B.

First, an example of operation in the case where power is generated bythe solar cell 9633 using external light is described. The voltage ofpower generated by the solar cell is raised or lowered by the DC-to-DCconverter 9636 so that the power has voltage for charging the battery9635. Then, when power supplied from the battery 9635 charged by thesolar cell 9633 is used for the operation of the display portion 9631,the switch SW1 is turned on and the voltage of the power is raised orlowered by the converter 9638 so as to be voltage needed for the displayportion 9631. In addition, when display on the display portion 9631 isnot performed, the switch SW1 is turned off and a switch SW2 is turnedon so that charge of the battery 9635 may be performed.

Although the solar cell 9633 is described as an example of a powergeneration means, the power generation means is not particularlylimited, and the battery 9635 may be charged by another power generationmeans such as a piezoelectric element or a thermoelectric conversionelement (Peltier element). The battery 9635 may be charged by anon-contact power transmission module that is capable of charging bytransmitting and receiving power by wireless (without contact), oranother charge means used in combination, and the power generation meansis not necessarily provided.

One embodiment of the present invention is not limited to the tabletterminal having the shape illustrated in FIGS. 12A to 12C as long as thedisplay portion 9631 is included.

Example 1

In this example, a light-emitting element (a light-emitting element 1)of one embodiment of the present invention is described. Note that thelight-emitting element 1 included the light-emitting layer 113 includinga fluorescent layer (the first light-emitting layer 113 a) and aphosphorescent layer (the second light-emitting layer 113 b) that werein contact with each other. The phosphorescent layer (the secondlight-emitting layer 113 b) was formed of a stack of a firstphosphorescent layer (the second light-emitting layer 113 b)-1 emittingred phosphorescence and a second phosphorescent layer (the secondlight-emitting layer 113 b)-2 emitting green phosphorescence. Structuralformulae of organic compounds used for the light-emitting element 1 areshown below.

A method for fabricating the light-emitting element 1 of this example isdescribed below.

(Method for Fabricating Light-Emitting Element 1) First, a film ofindium tin oxide containing silicon oxide (ITSO) was formed over a glasssubstrate by a sputtering method to form the first electrode 101. Thethickness was 110 nm and the electrode area was 2 mm×2 mm. Here, thefirst electrode 101 functions as an anode of the light-emitting element.

Next, in pretreatment for forming the light-emitting element over thesubstrate, a surface of the substrate was washed with water and baked at200° C. for 1 hour, and then UV ozone treatment was performed for 370seconds.

After that, the substrate was transferred into a vacuum evaporationapparatus where the pressure had been reduced to approximately 10⁻⁴ Pa,and was subjected to vacuum baking at 170° C. for 30 minutes in aheating chamber of the vacuum evaporation apparatus, and then thesubstrate was cooled down for approximately 30 minutes.

Then, the substrate provided with the first electrode 101 was fixed to asubstrate holder provided in the vacuum evaporation apparatus so thatthe surface on which the first electrode 101 was formed faced downward.The pressure in the vacuum evaporation apparatus was reduced to about10⁻⁴ Pa. After that, on the first electrode 101,4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation:DBT3P-II) represented by Structural Formula (i) and molybdenum(VI) oxidewere deposited by co-evaporation by an evaporation method usingresistance heating to form the hole-injection layer 111. The thicknesswas set to 40 nm, and the weight ratio of DBT3P-II to molybdenum oxidewas adjusted to 4:2 (=DBT3P-II: molybdenum oxide). Note that theco-evaporation method refers to an evaporation method in whichevaporation is carried out from a plurality of evaporation sources atthe same time in one treatment chamber.

Next, on the hole-injection layer 111,9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:PCzPA) represented by Structural Formula (ii) was deposited to athickness of 20 nm to form the hole-transport layer 112.

On the hole-transport layer 112,7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole(abbreviation: cgDBCzPA) represented by Structural Formula (iii) andN,N-bis(3-methylphenyl)-N,N-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPm) represented by Structural Formula (iv)were deposited by co-evaporation to a thickness of 10 nm to form thefluorescent layer (the first light-emitting layer 113 a) so that theweight ratio of cgDBCzPA to 1,6mMemFLPAPm was 1:0.04 (=cgDBCzPA:1,6mMemFLPAPrn). After that,2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mDBTBPDBq-II) represented by Structural Formula (v),N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine(abbreviation: PCBBiF) represented by Structural Formula (vi), and(dipivaloylmethanato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: [Ir(tppr)₂(dpm)]) represented by Structural Formula (vii)were deposited by co-evaporation to a thickness of 5 nm to form thefirst phosphorescent layer (the second light-emitting layer 113 b)-1 sothat the weight ratio of 2mDBTBPDBq-II to PCBBiF and [Ir(tppr)₂(dpm)]was 0.6:0.4:0.05 (=2mDBTBPDBq-II: PCBBiF: [Ir(tppr)₂(dpm)]), and then2mDBTBPDBq-II, PCBBiF, andbis[2-(6-tert-butyl-4-pyrimidinyl-κN3)phenyl-κC](2,4-pentanedionato-κ²O,O′)iridium(III)(abbreviation: [Ir(tBuppm)₂(acac)]) represented by Structural Formula(viii) were deposited by co-evaporation to a thickness of 20 nm to formthe second phosphorescent layer (the second light-emitting layer 113b)-2 so that the weight ratio of 2mDBTBPDBq-II to PCBBiF and[Ir(tBuppm)₂(acac)] was 0.8:0.2:0.05 (=2mDBTBPDBq-II: PCBBiF:[Ir(tBuppm)₂(acac)]). Thus, the phosphorescent layer (the secondlight-emitting layer 113 b) was formed.

Note that 2mDBTBPDBq-II and PCBBiF form an exciplex in thephosphorescent layer (the second light-emitting layer 113 b).Specifically, the photoluminescence wavelength of a co-evaporation filmof 2mDBTBPDBq-II and PCBBiF (i.e., the emission wavelength of theexciplex) is around 515 nm. This emission wavelength overlaps absorptionbands on the longest wavelength sides of [Ir(tppr)₂(dpm)] and[Ir(tBuppm)₂(acac)], so that energy transfer efficiency is high.

The singlet excitation energy of cgDBCzPA that is a host material in thefluorescent layer is higher than the singlet excitation energy of1,6mMemFLPAPrn that is a fluorescent substance. In addition, the tripletexcitation energy of cgDBCzPA is lower than the triplet excitationenergy of 1,6mMemFLPAPm. Thus, in the fluorescent layer (the firstlight-emitting layer 113 a), regeneration of a singlet excitonassociated with triplet-triplet annihilation and light emission areobtained easily. Occurrence of delayed fluorescence was actuallyobserved in the above-described structure.

After that, on the phosphorescent layer (the second light-emitting layer113 b), 2mDBTBPDBq-II was deposited to a thickness of 10 nm, andbathophenanthroline (abbreviation: BPhen) represented by StructuralFormula (ix) was deposited to a thickness of 15 nm to form theelectron-transport layer 114.

After the formation of the electron-transport layer 114, lithiumfluoride (LiF) was deposited by evaporation to a thickness of 1 nm toform the electron-injection layer 115. Finally, aluminum was depositedby evaporation to a thickness of 200 nm to form the second electrode 102functioning as a cathode. Through the above-described steps, thelight-emitting element 1 of this example was fabricated.

Note that in all the above evaporation steps, evaporation was performedby a resistance-heating method.

In a glove box under a nitrogen atmosphere, the light-emitting element 1was sealed with a glass substrate so as not to be exposed to the air(specifically, a sealant was applied onto an outer edge of the element,and at the time of sealing, UV treatment was performed first and thenheat treatment was performed at 80° C. for 1 hour). Then, thereliability of the light-emitting element 1 was measured. Note that themeasurement was performed at room temperature (in the atmosphere kept at25° C.).

FIG. 13 shows current density-luminance characteristics of thelight-emitting element 1. FIG. 14 shows luminance-current efficiencycharacteristics of the light-emitting element 1. FIG. 15 showsvoltage-luminance characteristics of the light-emitting element 1. FIG.16 shows luminance-external quantum efficiency characteristics of thelight-emitting element 1. FIG. 17 shows an emission spectrum of thelight-emitting element 1.

As can be seen from the characteristics, although the light-emittingelement 1 did not include an intermediate layer, the light-emittingelement 1 had a current efficiency of approximately 30 cd/A at around1000 cd/m² and an external quantum efficiency of approximately 13%. Thisindicates that the light-emitting element 1 had high emissionefficiency. In addition, the drive voltage of the light-emitting element1 was low, which was higher than or equal to 3 V and lower than 4 V.

Moreover, the emission spectrum shows that red light emissionoriginating from [Ir(tppr)₂(dpm)], green light emission originating from[Ir(tBuppm)₂(acac)], and blue light emission originating from1,6mMemFLPAPrn were observed. This indicates that light emission wassufficiently obtained from both of the fluorescent layer (the firstlight-emitting layer 113 a) and the phosphorescent layer (the secondlight-emitting layer 113 b). Furthermore, the light-emitting element 1had a correlated color temperature of 3130 K at around 1000 cd/m² and ageneral color rendering index of 92, which means that the light-emittingelement 1 had a sufficient color temperature for lighting and anexcellent color rendering property.

FIG. 18 shows results of a reliability test performed on thelight-emitting element 1. In the reliability test, the light-emittingelement 1 was driven under conditions that the initial luminance was5000 cd/m² and the current density was constant. FIG. 18 shows a changein normalized luminance with an initial luminance of 100%. The resultsshow that the light-emitting element 1 kept 94% of the initial luminanceeven after being driven for 62 hours and that the light-emitting element1 had a small decrease in luminance with driving time and highreliability.

The singlet excitation levels (S1 levels) of cgDBCzPA and 1,6mMemFLPArnthat were used for the light-emitting element 1 were estimated to be2.95 eV and 2.68 eV, respectively, from absorption edges of theco-evaporation film.

Table 1 shows measurement results of the triplet levels (T1 levels) of2mDBTBPDBq-II, PCBBiF, cgDBCzPA, and 1,6mMemFLPAPrn that were used forthe light-emitting element 1 in this example. The T1 levels wereobtained by measurement of emission of phosphorescence from thesubstances. In the measurement, each substance was irradiated withexcitation light with a wavelength of 325 nm and the measurementtemperature was 10 K. In measurement of an energy level, calculationfrom an absorption wavelength is more accurate than calculation from anemission wavelength. However, absorption of the T1 level is extremelylow and difficult to measure; thus, here, a peak wavelength located onthe shortest wavelength side in a phosphorescence spectrum was regardedas the T1 level. For that reason, a few errors may be included in themeasured values. Note that since intersystem crossing hardly occurs incgDBCzPA and 1,6mMemFLPAPm, tris(2-phenylpyridinato)iridium(abbreviation: Ir(ppy)₃) was added (i.e., co-evaporated) as asensitizer, whereby phosphorescence was observed.

TABLE 1 Phosphorescene Peak Wavelength (mm) T1 level (eV) 2mDBTBPDBq-II515 2.41 PCBBiF 509 2.44 cgDBCzPA 721 1.72 1.6mMemFLPAPm 675 1.84

The above results indicate that in the fluorescent layer of thelight-emitting element 1, the singlet excitation level of cgDBCzPA thatwas the host material was higher than that of 1,6mMemFLPAPrn that wasthe fluorescent substance and the triplet excitation level of cgDBCzPAwas lower than that of 1,6mMemFLPAPm; thus, the fluorescent layer (thefirst light-emitting layer 113 a) had a structure in which regenerationof a single exciton associated with triplet-triplet annihilation andlight emission were obtained easily.

The results also indicate that the triplet excitation level of cgDBCzPAthat was the host material in the fluorescent layer was lower than thoseof a first organic compound (2mDBTBPDBq-II) and a second organiccompound (PCBBiF) in the phosphorescent layer. In the case of such astructure, many of triplet excitons generated in the phosphorescentlayer are generally diffused into the fluorescent layer andnon-radiative decay is caused. However, in the light-emitting element 1of this example, the first organic compound and the second organiccompound formed an exciplex; thus, triplet excitons generated in thephosphorescent layer were hardly diffused into the fluorescent layer.One reason is probably as follows: energy transfer from one exciplex toanother exciplex is unlikely to occur because the exciplexes do not haveground states. Consequently, the light-emitting element 1 had remarkablecharacteristics: light emission from both of the fluorescent layer andthe phosphorescent layer and high efficiency.

As described above, the light-emitting element 1 of one embodiment ofthe present invention had highly well-balanced, favorablecharacteristics and was able to be fabricated easily and inexpensively.The above-described results were attributed to the following: diffusionof excitons was suppressed and non-radiative decay of the tripletexcitation energy was reduced by using the exciplex as an energy donorof the phosphorescent layer, and the emission efficiency was improvedbecause of occurrence of delayed fluorescence due to triplet-tripletannihilation in the host material in the fluorescent layer.

Example 2

In this example, methods for fabricating a light-emitting element 2 anda light-emitting element 3 of embodiments of the present invention andcharacteristics thereof are described. Structural formulae of organiccompounds used for the light-emitting element 2 and the light-emittingelement 3 are shown below.

(Method for Fabricating Light-Emitting Element 2)

A film of indium tin oxide containing silicon oxide (ITSO) was formed toa thickness of 110 nm over a glass substrate by a sputtering method toform the first electrode 101. The electrode area was 2 mm×2 mm.

Next, in pretreatment for forming the light-emitting element over thesubstrate, a surface of the substrate was washed with water and baked at200° C. for 1 hour, and then UV ozone treatment was performed for 370seconds.

After that, the substrate was transferred into a vacuum evaporationapparatus where the pressure had been reduced to approximately 10⁻⁴ Pa,and was subjected to vacuum baking at 170° C. for 30 minutes in aheating chamber of the vacuum evaporation apparatus, and then thesubstrate was cooled down for approximately 30 minutes.

Then, the substrate provided with the first electrode 101 was fixed to asubstrate holder provided in the vacuum evaporation apparatus so thatthe surface on which the first electrode 101 was formed faced downward.The pressure in the vacuum evaporation apparatus was reduced to about10⁻⁴ Pa. After that, on the first electrode 101,4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation:DBT3P-II) represented by Structural Formula (i) and molybdenum(VI) oxidewere deposited by co-evaporation by an evaporation method usingresistance heating to form the hole-injection layer 111. The thicknesswas set to 30 nm, and the weight ratio of DBT3P-II to molybdenum oxidewas adjusted to 2:1 (=DBT3P-II: molybdenum oxide).

Next, on the hole-injection layer 111,9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:PCzPA) represented by Structural Formula (ii) was deposited to athickness of 20 nm to form the hole-transport layer 112.

On the hole-transport layer 112,7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole(abbreviation: cgDBCzPA) represented by Structural Formula (iii) andN,N-bis(3-methylphenyl)-N,N-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPrn) represented by Structural Formula (iv)were deposited by co-evaporation to a thickness of 10 nm to form thefirst light-emitting layer 113 a that was a fluorescent layer so thatthe weight ratio of cgDBCzPA to 1,6mMemFLPAPrn was 1:0.02 (=cgDBCzPA:1,6mMemFLPAPrn). After that,2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mDBTBPDBq-II) represented by Structural Formula (v),N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine(abbreviation: PCBBiF) represented by Structural Formula (vi), andbis{4,6-dimethyl-2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,4-pentanedionato-κ²O,O′)iridium(III)(abbreviation: [Ir(dmdppr-dmp)₂(acac)]) represented by StructuralFormula (x) were deposited by co-evaporation to a thickness of 5 nm toform the first phosphorescent layer (the second light-emitting layer 113b)-1 so that the weight ratio of 2mDBTBPDBq-II to PCBBiF and[Ir(dmdppr-dmp)₂(acac)] was 0.5:0.5:0.05 (=2mDBTBPDBq-II: PCBBiF:[Ir(dmdppr-dmp)₂(acac)]), and then 2mDBTBPDBq-II, PCBBiF, andbis[2-(6-tert-butyl-4-pyrimidinyl-κN3)phenyl-κC](2,4-pentanedionato-K₂O,O′)iridium(III))(abbreviation: [Ir(tBuppm)₂(acac)]) represented by Structural Formula(viii) were deposited by co-evaporation to a thickness of 20 nm to formthe second phosphorescent layer (the second light-emitting layer 113b)-2 so that the weight ratio of 2mDBTBPDBq-II to PCBBiF and[Ir(tBuppm)₂(acac)] was 0.8:0.2:0.05 (=2mDBTBPDBq-II: PCBBiF:[Ir(tBuppm)₂(acac)]). Thus, the second light-emitting layer 113 b thatwas the phosphorescent layer was formed.

Note that 2mDBTBPDBq-II and PCBBiF form an exciplex in thephosphorescent layer. This emission wavelength overlaps absorption bandson the longest wavelength sides of [Ir(dmdppr-dmp)₂(acac)] and[Ir(tBuppm)₂(acac)], so that energy transfer efficiency is high.

The singlet excitation energy of cgDBCzPA that is a host material in thefluorescent layer (the first light-emitting layer 113 a) is higher thanthe singlet excitation energy of 1,6mMemFLPAPrn that is a fluorescentsubstance. In addition, the triplet excitation energy of cgDBCzPA islower than the triplet excitation energy of 1,6mMemFLPAPrn. Thus, in thephosphorescent layer (the first light-emitting layer 113 a),regeneration of a singlet exciton associated with triplet-tripletannihilation and light emission are obtained easily.

After that, on the second light-emitting layer 113 b that was thephosphorescent layer, 2mDBTBPDBq-II was deposited to a thickness of 10nm, and bathophenanthroline (abbreviation: BPhen) represented byStructural Formula (ix) was deposited to a thickness of 15 nm to formthe electron-transport layer 114.

After the formation of the electron-transport layer 114, lithiumfluoride (LiF) was deposited by evaporation to a thickness of 1 nm toform the electron-injection layer 115. Finally, aluminum was depositedby evaporation to a thickness of 200 nm to form the second electrode 102functioning as a cathode. Through the above-described steps, thelight-emitting element 2 of this example was fabricated.

Note that in all the above evaporation steps, evaporation was performedby a resistance-heating method.

(Method for Fabricating Light-Emitting Element 3)

The light-emitting element 3 was fabricated in a manner similar to thatof the light-emitting element 2 except that the weight ratio of2mDBTBPDBq-II to PCBBiF and [Ir(dmdppr-dmp)₂(acac)] that were used forforming the first phosphorescent layer (the second light-emitting layer113 b)-1 in the light-emitting element 2 was set to 0.2:0.8:0.05 and theweight ratio of 2mDBTBPDBq-II to PCBBiF and [Ir(tBuppm)₂(acac)] thatwere used for forming the second phosphorescent layer (the secondlight-emitting layer 113 b)-2 was set to 0.9:0.1:0.05.

In a glove box under a nitrogen atmosphere, the light-emitting element 2and the light-emitting element 3 were each sealed with a glass substrateso as not to be exposed to the air (specifically, a sealant was appliedonto an outer edge of the element, and at the time of sealing, UVtreatment was performed first and then heat treatment was performed at80° C. for 1 hour). Then, characteristics of the light-emitting elementswere measured. Note that the measurement was performed with anintegrating sphere at room temperature (in the atmosphere kept at 25°C.). Table 2 shows values of the characteristics at a current density of2.5 mA/cm³.

TABLE 2 General Correlated Color External Color Rendering Power QuantumVoltage Temperature Index Efficiency Efficiency (V) (K) duv Ra (lm/W)(%) Light-Emitting 3.0 4710 0.0142 86 36 14 Element 2 Light-Emitting 3.02950 0.0083 88 45 18 Element 3

Although the light-emitting elements 2 and 3 did not have a specialoutcoupling structure, the light-emitting elements 2 and 3 had highexternal quantum efficiency and power efficiency. In addition, thevoltage was as low as 3 V as compared with a tandem light-emittingelement.

FIG. 19A shows an emission spectrum of the light-emitting element 2, andFIG. 19B shows an emission spectrum of the light-emitting element 3. Ascan be seen from the emission spectra, red light emission originatingfrom [Ir(dmdppr-dmp)₂(acac)], green light emission originating from[Ir(tBuppm)₂(acac)], and blue light emission originating from1,6mMemFLPAPm were observed. This indicates that light emission wassufficiently obtained from both of the first light-emitting layer 113 athat was the fluorescent layer and the second light-emitting layer 113 bthat was the phosphorescent layer.

In addition, each of the light-emitting elements had a general colorrendering index (Ra) of 85 or more, which means that each of thelight-emitting elements had a favorable color rendering property, andhad small duv; thus, the light-emitting elements are suitably used forlighting. Furthermore, the light-emitting element 2 had a colortemperature of 4710 K that is day white, and the light-emitting element3 had a color temperature of 2950 K that is incandescent color. Thisindicates that the light-emitting elements 2 and 3 have thecharacteristics conforming to the standards.

The only difference between the light-emitting element 2 and thelight-emitting element 3 lies in the mixing ratio of the substances forforming the second light-emitting layer 113 b. In other words, thisexample reveals that white light emission in a wide color temperaturerange of 2950 K to 4710 K was able to be obtained by adjusting themixing ratio of the substances, which was a simple method. Note that acolor temperature of 2950 K or less or 4710 K or more can be obtaineddepending on adjustment. In addition, it is also a significant featurethat the light emission in the wide color temperature range was obtainedwithout a large decrease in efficiency. In this example, the case ofwhite light emission is described because the light-emitting elementseach emitting light of three colors of blue, green, and red werefabricated. In the case where a light-emitting element emitting light ofanother color is fabricated, a mixed color ratio of light emission canbe controlled and a desired emission color can be obtained easily byadjusting the mixing ratio of substances included in the light-emittingelement.

As described above, the light-emitting element 2 and the light-emittingelement 3 had highly well-balanced, favorable characteristics and can befabricated easily and inexpensively. The above-described results wereattributed to the following: diffusion of excitons was suppressed andnon-radiative decay of the triplet excitation energy was reduced byusing the exciplex as an energy donor of the phosphorescent layer, andthe emission efficiency was improved because of occurrence of delayedfluorescence due to triplet-triplet annihilation in the host material inthe fluorescent layer.

Example 3

In this example, a method for fabricating a light-emitting element 4 ofone embodiment of the present invention and characteristics thereof aredescribed. In the light-emitting element 4, the first light-emittinglayer 113 a was formed on the cathode side and the second light-emittinglayer 113 b was formed on the anode side. Structural formulae of organiccompounds used for the light-emitting element 4 are shown below.

(Method for Fabricating Light-Emitting Element 4)

A film of indium tin oxide containing silicon oxide (ITSO) was formed toa thickness of 110 nm over a glass substrate by a sputtering method toform the first electrode 101. The electrode area was 2 mm×2 mm.

Next, in pretreatment for forming the light-emitting element over thesubstrate, a surface of the substrate was washed with water and baked at200° C. for 1 hour, and then UV ozone treatment was performed for 370seconds.

After that, the substrate was transferred into a vacuum evaporationapparatus where the pressure had been reduced to approximately 10⁻⁴ Pa,and was subjected to vacuum baking at 170° C. for 30 minutes in aheating chamber of the vacuum evaporation apparatus, and then thesubstrate was cooled down for approximately 30 minutes.

Then, the substrate provided with the first electrode 101 was fixed to asubstrate holder provided in the vacuum evaporation apparatus so thatthe surface on which the first electrode 101 was formed faced downward.The pressure in the vacuum evaporation apparatus was reduced to about10⁻⁴ Pa. After that, on the first electrode 101,4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation:DBT3P-II) represented by Structural Formula (i) and molybdenum(VI) oxidewere deposited by co-evaporation by an evaporation method usingresistance heating to form the hole-injection layer 111. The thicknesswas set to 40 nm, and the weight ratio of DBT3P-II to molybdenum oxidewas adjusted to 4:2 (=DBT3P-II: molybdenum oxide).

Next, on the hole-injection layer 111,N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine(abbreviation: PCBBiF) represented by Structural Formula (vi) wasdeposited to a thickness of 20 nm to form the hole-transport layer 112.

On the hole-transport layer 112,2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mDBTBPDBq-II) represented by Structural Formula (v),PCBBiF, and(dipivaloylmethanato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: [Ir(tppr)₂(dpm)]) represented by Structural Formula (vii)were deposited by co-evaporation to a thickness of 20 nm to form thefirst phosphorescent layer (the second light-emitting layer 113 b)-1 sothat the weight ratio of 2mDBTBPDBq-II to PCBBiF and [Ir(tppr)₂(dpm)]was 0.2:0.8:0.05 (=2mDBTBPDBq-II: PCBBiF: [Ir(tppr)₂(dpm)]), and then2mDBTBPDBq-II, PCBBiF, andbis[2-(6-tert-butyl-4-pyrimidinyl-κN3)phenyl-κC](2,4-pentanedionato-κ²O,O′)iridium(III))(abbreviation: [Ir(tBuppm)₂(acac)]) represented by Structural Formula(viii) were deposited by co-evaporation to a thickness of 5 nm to formthe second phosphorescent layer (the second light-emitting layer 113b)-2 so that the weight ratio of 2mDBTBPDBq-II to PCBBiF and[Ir(tBuppm)₂(acac)] was 0.3:0.7:0.05 (=2mDBTBPDBq-II: PCBBiF:[Ir(tBuppm)₂(acac)]). Thus, the second light-emitting layer 113 b wasthat was a phosphorescent layer was formed. After that,7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole(abbreviation: cgDBCzPA) represented by Structural Formula (iii) andN,N-bis(3-methylphenyl)-N,N-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPm) represented by Structural Formula (iv)were deposited by co-evaporation to a thickness of 25 nm to form thefirst light-emitting layer 113 a that was a fluorescent layer so thatthe weight ratio of cgDBCzPA to 1,6mMemFLPAPm was 1:0.04 (=cgDBCzPA:1,6mMemFLPAPrn). Through the above-described steps, the light-emittinglayer 113 was formed.

Note that 2mDBTBPDBq-II and PCBBiF form an exciplex in the secondlight-emitting layer 113 b that is the phosphorescent layer. Thisemission wavelength overlaps absorption bands on the longest wavelengthsides of [Ir(tppr)₂(dpm)] and [Ir(tBuppm)₂(acac)], so that energytransfer efficiency is high.

The singlet excitation energy of cgDBCzPA that is a host material in thefluorescent layer (the first light-emitting layer 113 a) is higher thanthe singlet excitation energy of 1,6mMemFLPAPm that is a fluorescentsubstance. In addition, the triplet excitation energy of cgDBCzPA islower than the triplet excitation energy of 1,6mMemFLPAPm. Thus, in thephosphorescent layer (the first light-emitting layer 113 a),regeneration of a singlet exciton associated with triplet-tripletannihilation and light emission are obtained easily.

After that, on the first light-emitting layer 113 a that was thefluorescent layer, cgDBCzPA was deposited to a thickness of 10 nm, andbathophenanthroline (abbreviation: BPhen) represented by StructuralFormula (ix) was deposited to a thickness of 15 nm to form theelectron-transport layer 114.

After the formation of the electron-transport layer 114, lithiumfluoride (LiF) was deposited by evaporation to a thickness of 1 nm toform the electron-injection layer 115. Finally, aluminum was depositedby evaporation to a thickness of 200 nm to form the second electrode 102functioning as a cathode. Through the above-described steps, thelight-emitting element 1 of this example was fabricated. Note that inall the above evaporation steps, evaporation was performed by aresistance-heating method.

An element structure of the light-emitting element 4 is shown in Table3.

In a glove box under a nitrogen atmosphere, the light-emitting element 4was sealed with a glass substrate so as not to be exposed to the air(specifically, a sealant was applied onto an outer edge of the element,and at the time of sealing, UV treatment was performed first and thenheat treatment was performed at 80° C. for 1 hour). Then,characteristics of the light-emitting element 4 were measured at acurrent density of 2.5 mA/cm² and at around 1000 cd/cm².

TABLE 3 Correlated General Color Color External Volt- Temper- RenderingPower Quantum age ature Index Efficiency Efficiency (V) (K) duv Ra(lm/W) (%) Light- 2.7 2690 0.01 84 29 11 Emitting Element 4

Although the light-emitting element 4 did not have a special outcouplingstructure, the light-emitting element 4 had high external quantumefficiency and power efficiency. In addition, the light-emitting element4 had a very low voltage of 2.7 V as compared with a tandemlight-emitting element.

FIG. 20 shows an emission spectrum of the light-emitting element 4. Ascan be seen from the emission spectrum, red light emission originatingfrom [Ir(tppr)₂(dpm)], green light emission originating from[Ir(tBuppm)₂(acac)], and blue light emission originating from1,6mMemFLPAPm were observed. This indicates that light emission wassufficiently obtained from both of the first light-emitting layer 113 athat was the fluorescent layer and the second light-emitting layer 113 bthat was the phosphorescent layer.

In addition, the light-emitting element 4 had a general color renderingindex (Ra) of 84, which means that the light-emitting element 4 had afavorable color rendering property, and had small duv; thus, thelight-emitting element 4 is suitably used for lighting. Furthermore, thelight-emitting element 4 had a color temperature of 2690 K that isincandescent color. This indicates that the light-emitting element 4 hadthe characteristic conforming to the standards.

As described above, the light-emitting element 4 had well-balanced,favorable characteristics and was able to be fabricated easily andinexpensively. The above-described results were attributed to thefollowing: diffusion of excitons was suppressed and non-radiative decayof the triplet excitation energy was reduced by using the exciplex as anenergy donor of the phosphorescent layer, and the emission efficiencywas improved because of occurrence of delayed fluorescence due totriplet-triplet annihilation in the host material in the fluorescentlayer. It was also found that favorable characteristics were able to beobtained even when the stacking order in the light-emitting layer 113was changed.

REFERENCE NUMERALS

101: first electrode, 102: second electrode, 103: EL layer, 111:hole-injection layer, 112: hole-transport layer, 113: light-emittinglayer, 113 a: first light-emitting layer, 113 b: second light-emittinglayer, 114: electron-transport layer, 115: electron-injection layer,400: substrate, 401: first electrode, 403: EL layer, 404: secondelectrode, 405: sealant, 406: sealant, 407: sealing substrate, 412: pad,420: IC chip, 501: first electrode, 502: second electrode, 511: firstlight-emitting unit, 512: second light-emitting unit, 513:charge-generation layer, 601: driver circuit portion (source line drivercircuit), 602: pixel portion, 603: driver circuit portion (gate linedriver circuit), 604: sealing substrate, 605: sealant, 607: space, 608:wiring, 609: flexible printed circuit (FPC), 610: element substrate,611: switching FET, 612: current control FET, 613: first electrode, 614:insulator, 616: EL layer, 617: second electrode, 618: light-emittingelement, 623: n-channel FET, 624: p-channel FET, 625: drying agent, 901:housing, 902: liquid crystal layer, 903: backlight unit, 904: housing,905: driver IC, 906: terminal, 951: substrate, 952: electrode, 953:insulating layer, 954: partition layer, 955: EL layer, 956: electrode,1001: substrate, 1002: base insulating film, 1003: gate insulating film,1006: gate electrode, 1007: gate electrode, 1008: gate electrode, 1020:first interlayer insulating film, 1021: second interlayer insulatingfilm, 1022: electrode, 1024W: first electrode of light-emitting element,1024R: first electrode of light-emitting element, 1024G: first electrodeof light-emitting element, 1024B: first electrode of light-emittingelement, 1025: partition, 1028: EL layer, 1029: second electrode oflight-emitting element, 1031: sealing substrate, 1032: sealant, 1033:transparent base material, 1034R: red coloring layer, 1034G: greencoloring layer, 1034B: blue coloring layer, 1035: black layer (blackmatrix), 1036: overcoat layer, 1037: third interlayer insulating film,1040: pixel portion, 1041: driver circuit portion, 1042: peripheralportion, 2001: housing, 2002: light source, 3001: lighting device, 5000:display region, 5001: display region, 5002: display region, 5003:display region, 5004: display region, 5005: display region, 7101:housing, 7103: display portion, 7105: stand, 7107: display portion,7109: operation key, 7110: remote controller, 7201: main body, 7202:housing, 7203: display portion, 7204: keyboard, 7205: externalconnection port, 7206: pointing device, 7210: second display portion,7301: housing, 7302: housing, 7303: joint portion, 7304: displayportion, 7305: display portion, 7306: speaker portion, 7307: recordingmedium insertion portion, 7308: LED lamp, 7309: operation key, 7310:connection terminal, 7311: sensor, 7401: housing, 7402: display portion,7403: operation button, 7404: external connection port, 7405: speaker,7406: microphone, 7400: mobile phone, 9033: clip, 9034: switch, 9035:power switch, 9036: switch, 9038: operation switch, 9630: housing, 9631:display portion, 9631 a: display portion, 9631 b: display portion, 9632a: touchscreen region, 9632 b: touchscreen region, 9633: solar cell,9634: charge and discharge control circuit, 9635: battery, 9636:DC-to-DC converter, 9637: operation key, 9638: converter, and 9639:button.

This application is based on Japanese Patent Application serial no.2013-174560 filed with the Japan Patent Office on Aug. 26, 2013,Japanese Patent Application serial no. 2013-249449 filed with the JapanPatent Office on Dec. 2, 2013, and Japanese Patent Application serialno. 2014-112119 filed with the Japan Patent Office on May 30, 2014, theentire contents of which are hereby incorporated by reference.

1. A light-emitting device comprising: a pair of electrodes; an EL layerbetween the pair of electrodes; a first light-emitting layer and asecond light-emitting layer in the EL layer, the first light-emittinglayer being in contact with the second light-emitting layer, wherein thefirst light-emitting layer comprises a fluorescent substance and a hostmaterial, wherein the second light-emitting layer comprises a firstorganic compound, a second organic compound, and a substance, whereinthe first organic compound is a material having a hole-transportproperty, wherein the second organic compound is a material having anelectron-transport property, and wherein the substance is capable ofconverting a triplet excitation energy into luminescence.
 2. Thelight-emitting device according to claim 1, wherein a singlet excitationlevel of the host material is higher than a singlet excitation level ofthe fluorescent substance, and wherein a triplet excitation level of thehost material is lower than a triplet excitation level of thefluorescent substance.
 3. The light-emitting device according to claim1, wherein a triplet excitation level of the host material is lower thantriplet excitation levels of the first organic compound and the secondorganic compound.
 4. The light-emitting device according to claim 1,wherein a mixing ratio of the first organic compound to the secondorganic compound is in a range of 5:5 to 9:1.
 5. The light-emittingdevice according to claim 1, wherein the host material is an organiccompound having a condensed aromatic ring skeleton.
 6. Thelight-emitting device according to claim 1, wherein the host material isan organic compound having an anthracene skeleton.
 7. The light-emittingdevice according to claim 1, wherein the host material is an organiccompound having an anthracene skeleton, and wherein the fluorescentsubstance is an organic compound having a pyrene skeleton.
 8. Alight-emitting device comprising: a pair of electrodes; an EL layerbetween the pair of electrodes; and a first light-emitting layer and asecond light-emitting layer in the EL layer, the first light-emittinglayer being in contact with the second light-emitting layer, wherein thefirst light-emitting layer comprises a fluorescent substance and a hostmaterial, wherein the second light-emitting layer comprises a firstlayer and a second layer, wherein the first layer comprises a firstorganic compound, a second organic compound, and a first phosphorescentsubstance, wherein the first organic compound is a material having ahole-transport property, wherein the second organic compound is amaterial having an electron-transport property, wherein the firstphosphorescent substance is capable of converting a first tripletexcitation energy into luminescence, wherein the second layer comprisesa third organic compound, a fourth organic compound, and a secondphosphorescent substance, wherein the third organic compound is amaterial having a hole-transport property, wherein the fourth organiccompound is a material having an electron-transport property, whereinthe third organic compound and the fourth organic compound, and whereinthe second phosphorescent substance is capable of converting a secondtriplet excitation energy into luminescence.
 9. The light-emittingdevice according to claim 8, wherein a singlet excitation level of thehost material is higher than a singlet excitation level of thefluorescent substance, and wherein a triplet excitation level of thehost material is lower than a triplet excitation level of thefluorescent substance.
 10. The light-emitting device according to claim8, wherein a triplet excitation level of the host material is lower thantriplet excitation levels of the first organic compound and the secondorganic compound, and triplet excitation levels of the third organiccompound and the fourth organic compound.
 11. The light-emitting deviceaccording to claim 8, wherein a mixing ratio of the first organiccompound to the second organic compound is in a range of 5:5 to 9:1, andwherein a mixing ratio of the third organic compound to the fourthorganic compound is in a range of 5:5 to 9:1.
 12. The light-emittingdevice according to claim 8, wherein the host material is an organiccompound having a condensed aromatic ring skeleton.
 13. Thelight-emitting device according to claim 8, wherein the host material isan organic compound having an anthracene skeleton.
 14. Thelight-emitting device according to claim 8, wherein the host material isan organic compound having an anthracene skeleton, and wherein thefluorescent substance is an organic compound having a pyrene skeleton.15. The light-emitting device according to claim 8, wherein the firstlight-emitting layer emits blue light, wherein the first layer emits redlight, and wherein the second layer emits green light.
 16. Thelight-emitting device according to claim 8, wherein the firstlight-emitting layer, the first layer, and the second layer are stackedin this order.
 17. The light-emitting device according to claim 8,wherein the first light-emitting layer is formed on an anode side of thepair of electrodes, and the second light-emitting layer is formed on acathode side of the pair of electrodes.
 18. The light-emitting deviceaccording to claim 8, wherein the first phosphorescent substance has anelectron-trapping property, and wherein the second phosphorescentsubstance has an electron-trapping property.